Titlebook: Electromigration Modeling at Circuit Layout Level; Cher Ming Tan,Feifei He Book 2013 The Author(s) 2013 3D Modeling.Atomic Flux Divergence

紀念

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M. A. Mohamed Salih,Bas Gaay de Fortman. In this chapter, a complete 3D circuit model including both intra- and inter-block interconnects is constructed. Electro-thermo-structural simulations are performed, and the modifications that can help enhancing the EM reliability of the circuit are carried out based on the observations in the simulation.

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Concluding Remarks,stributions of the interconnects in an IC were greatly affected by the interconnect structures and the surrounding materials, the 2D EM circuit simulators based only on current density were no longer adequate. Thus, there is a need for 3D EM modeling at circuit layout level.

全國性

Book 2013 modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.

OMIT

2191-530X ate such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.978-981-4451-20-8978-981-4451-21-5Series ISSN 2191-530X Series E-ISSN 2191-5318

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Electromigration Modeling at Circuit Layout Level978-981-4451-21-5Series ISSN 2191-530X Series E-ISSN 2191-5318

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