Titlebook: Electroluminescence / Elektrolyuminestsentsiya / Электролюминесценция; Proceedings (Trudy) D. V. Skobel’tsyn (Director) Conference proceed

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Electroluminescence and Other Optical and Electrical Characteristics of p-n Junctions in Zinc Sulfi these junctions were investigated. The results obtained were used to estimate the barrier height, donor level depth, and forbidden band width of ZnS single crystals. The mechanism of current flow through a p-n junction was analyzed. Information on the electron energy states and the mechanism of ele

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Electroluminescence and Some Electrical Properties of Homogeneous Zinc Sulfide Single Crystals,dence of the brightness on the voltage were determined. Ultraviolet electroluminescence, corresponding to interband recombination of electronhole pairs, was detected and its spectrum investigated. The hypothesis of strong compensation of zinc sulfide was verified. The forbidden band width and the do

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Temperature Dependence of the Brightness of the Radiation Emitted by Electroluminescent Capacitors,he current rectified by this capacitor. The influence of the frequency of the excitation field on these characteristics was also determined. This made it possible to draw some conclusions about the mechanism which governed the electroluminescence brightness. It was concluded that the physical meanin

NAG

Principles of Conversion of Electrical Energy into Light,parameters of a semiconductor to be used as an incandescent body and as an electroluminescent light source. These parameters include the forbidden band width, the optimal impurity concentration, and the depth of impurity levels. It is shown that the replacement of tungsten with a plate of a suitably

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Principles of Conversion of Electrical Energy into Light, selected semiconducting material should double or treble the light output of an incandescent lamp. It is also shown that the efficiency of injection-electroluminescence light sources may approach 100%.

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