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Titlebook: Electric-Field Control of Magnetization and Electronic Transport in Ferromagnetic/Ferroelectric Hete; Sen Zhang Book 2014 Springer-Verlag

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樓主: 倒鉤
21#
發(fā)表于 2025-3-25 04:48:30 | 只看該作者
Betriebswirtschaftliche Steuerlehre,erimental methods used to characterize the microscopic magnetic and ferroelectric properties, including scanning probe microscopy, X-ray diffraction, and transmission electron microscopy techniques; and finally the electric transport measurement techniques used in the investigation of electric field tunable spintronic devices.?
22#
發(fā)表于 2025-3-25 08:48:43 | 只看該作者
23#
發(fā)表于 2025-3-25 15:15:19 | 只看該作者
Experimental Methods,erimental methods used to characterize the microscopic magnetic and ferroelectric properties, including scanning probe microscopy, X-ray diffraction, and transmission electron microscopy techniques; and finally the electric transport measurement techniques used in the investigation of electric field tunable spintronic devices.?
24#
發(fā)表于 2025-3-25 16:38:50 | 只看該作者
25#
發(fā)表于 2025-3-25 22:03:11 | 只看該作者
Electric-Field Control of Magnetism and Magnetoresistance in CoFeB/PMN-PT(011) Structure,t magnetoresistance have been realized in the spintronic devices. This work is helpful for the investigations involving electric-field control of magnetization, as well as magnetoresistance, and important for the promising applications related to strain-mediated magnetoelectric memories.
26#
發(fā)表于 2025-3-26 02:29:16 | 只看該作者
Betriebswirtschaftliche Steuerlehre,e and the absence of magnetocrystalline anisotropy in ferromagnetic film has been demonstrated as the origin of the non-volatile magnetoelectric effect. Finally the fatigue and retention properties of this non-volatile electric-field control of magnetization have been characterized and relevant appl
27#
發(fā)表于 2025-3-26 05:32:11 | 只看該作者
https://doi.org/10.1007/978-3-322-94500-6t magnetoresistance have been realized in the spintronic devices. This work is helpful for the investigations involving electric-field control of magnetization, as well as magnetoresistance, and important for the promising applications related to strain-mediated magnetoelectric memories.
28#
發(fā)表于 2025-3-26 09:22:39 | 只看該作者
Electric-Field Control of Magnetization and Electronic Transport in Ferromagnetic/Ferroelectric Hete
29#
發(fā)表于 2025-3-26 16:24:25 | 只看該作者
Book 2014N-PT, which offers an avenue for implementing electric-writing and magnetic-reading random access memory at room temperature. Readers will learn the basic properties of multiferroic materials, many useful techniques related to characterizing multiferroics and the interesting ME effect in CoFeB/PMN-P
30#
發(fā)表于 2025-3-26 20:31:16 | 只看該作者
2190-5053 access memory at room temperature. Readers will learn the basic properties of multiferroic materials, many useful techniques related to characterizing multiferroics and the interesting ME effect in CoFeB/PMN-P978-3-662-51320-0978-3-642-54839-0Series ISSN 2190-5053 Series E-ISSN 2190-5061
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