Titlebook: ESPRIT ’90; Proceedings of the A Commission Of The European Communities Directorate Conference proceedings 1990 ECSC, EEC, EAEC, Brussels a

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Internal Gettering as a Function of the Wafer Position in the Original Crystal Rodocesses as a function of the wafer position in the original crystal rod. The purpose of the investigations was to clarify whether inhomogeneities in internal gettering which were observed previously can be explained by the respective wafer position in the crystal..The results exhibit drastic variati

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Preamorphization Techniques for Shallow Junctions in SIinvestigate the preamorphization technique as a tool to prevent channeling during transistor fabrication. Implantation of heavy ions such as Si. and Ge. offers the possibility of amorphizing a desired region in a highly controllable way. The preamorphization experiments were carried out using these

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Very High Speed Bipolar Technology and Circuits Tipbase Bipolar Advanced Silicon for Europemens, SGS-Thomson, Plessey and Telefunken..It covers a period of three years. Effective work started on Feb. 1, 1989, the first year being a definition phase..The project is headed by Europe’s most competent partners in this field. It is firmly based on common ground partially developed within previ

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Combined Analog Digital Integration: CANDI goal of the CANDI project is to develop a mixed analog digital BICMOS technology with the related CAD and design techniques. During the first phase of the project, a 1.2.m BICMOS process has been developed and optimized.; the objective of this technology is to achieve simultaneously high density CM

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Terminological Information Management in ADKMSgical approach. We describe an application scenario in which organisational information about a large Company Group is acquired for a knowledge base. The application (developed by the project group of Datamont SpA, Milano) reveals a number of requirements which are contrasted with the service offere