Titlebook: Dry Etching for VLSI; A. J. Roosmalen,J. A. G. Baggerman,S. J. H. Brader Book 1991 Springer Science+Business Media New York 1991 Plasma.VL

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書目名稱Dry Etching for VLSI影響因子(影響力)




書目名稱Dry Etching for VLSI影響因子(影響力)學(xué)科排名




書目名稱Dry Etching for VLSI網(wǎng)絡(luò)公開度




書目名稱Dry Etching for VLSI網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Dry Etching for VLSI被引頻次




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高調(diào)

constitutional

https://doi.org/10.1007/978-3-030-36766-4ng. In fact, certain diagnostic methods are a prerequisite for precise control of etching processes. Over the years a large number of techniques have been developed; these usually require some in situ “sensor” to measure the etch rates or to detect the endpoint when a film has been etched through to expose the underlying material.

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Hyperalgesia

The Plasma State,remely low, namely about 10. at room temperature. Not much, but it is there, and room-temperature air is certainly not a plasma. A useful definition for the plasma state has been postulated by Chen [23],

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