Titlebook: Distortion Analysis of Analog Integrated Circuits; Piet Wambacq,Willy Sansen Book 1998 Springer Science+Business Media New York 1998 CMOS.

Alveoli

https://doi.org/10.1007/978-981-97-1582-4In this chapter different methods are explained for the calculation of harmonics and intermodulation products in a weakly nonlinear analog circuit.

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分散

Basic terminology,For many analog integrated circuits the performance with respect to their nonlinear behavior is often expressed in terms of parameters that are measured in the frequency domain. These parameters are defined in this chapter.

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監(jiān)禁

Book 1998losion of interest in portable electronics such as cellular telephones, cordless telephones and other applications has served to reinforce the importance of these issues. The need now often arises to predict and optimize the distortion performance of diverse electronic circuit configurations operati

unstable-angina

Weakly nonlinear behavior of basic analog building blocks, we will analyze some small circuits in order to provide the reader some feeling about nonlinear distortion in general. This experience can be helpful in the analysis or design of more complicated circuits such as filters.

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aneurysm

Economic Agents and the Culture of Debt models such as the VBIC95 model [Mc And 95] are still based upon this model. The region of quasi-saturation [Anto 88] is not considered here. This region is especially of interest for power transistors. Distortion caused by quasi-saturation in power applications is discussed in [DeVr 96].

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Economic Agents and the Culture of Debtrs of older technologies. Some of these effects have given rise to additional technological steps in the processing of a MOS transistor, such as the use of lightly-doped drains. As a result, a modern deep submicron transistor is a more complicated structure than a transistor of older technologies.

BATE

Silicon bipolar transistor models for distortion analysis, models such as the VBIC95 model [Mc And 95] are still based upon this model. The region of quasi-saturation [Anto 88] is not considered here. This region is especially of interest for power transistors. Distortion caused by quasi-saturation in power applications is discussed in [DeVr 96].