Titlebook: Disorder and Order in the Solid State; Concepts and Devices Roger W. Pryor,Brian B. Schwartz,Stanford R. Ovshi Book 1988 Springer Science+B

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https://doi.org/10.1007/978-3-642-99399-2lastic and thermal boundary conditions will be reviewed. An account of this phenomenon based upon recent models of ferroelectricity and grain boundary potential is given. A comparison to silicon and germanium is attempted.

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,Zeichnen für Fortgeschrittene,in these devices were originally made for AC application and then adapted for DC operation by material changes such as the addition of selenium to the tellurium-based, stable chalcogenide materials. Threshold switches were successfully made in thin film form for experimental purposes..In order to ma

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Perspektivische Fertigungszeichnungen,itches viz, variation of attenuation with driving current and frequency response are described. These switches are much simpler than conventional p-i-n diodes and have the advantage of displaying memory type behavior. Their characteristics also throw light on the electrical properties of chalcogenid

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,Erratum to: Ma?e und Ma?systeme,oach resulting in the formulation of a set of two coupled ordinary differential equations in terms of the real and imaginary parts of the complex a.c. carrier density function is explained in detail. As an alternative and more practical method, the calculation of the driving-point impedance function