Titlebook: Disorder and Order in the Solid State; Concepts and Devices Roger W. Pryor,Brian B. Schwartz,Stanford R. Ovshi Book 1988 Springer Science+B

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Piezoresistivity in Semiconducting Ferroelectricslastic and thermal boundary conditions will be reviewed. An account of this phenomenon based upon recent models of ferroelectricity and grain boundary potential is given. A comparison to silicon and germanium is attempted.

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,Zeichnen für Fortgeschrittene,The paper deals with the consequences of a steady state minority carrier injection through a metal or a high-low junction into the bulk of a semiconductor. Depending on the nature of the semiconductor, the spatial distribution of the net recombination rate of injected minority carriers R occurs in two different ways:

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Proper Capacitance Modeling for Devices with Distributed Space ChargeThe present paper derives from our previous work (1–3) on modeling the time dependence of ovonic threshold switches (OTS), and DIACS (4). It is also related to our analysis (5–8) of one carrier, space-charge controlled conduction in metal-insulator metal (MIM) structures.

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Institute for Amorphous Studies Serieshttp://image.papertrans.cn/e/image/281461.jpg