Titlebook: Design Exploration of Emerging Nano-scale Non-volatile Memory; Hao Yu,Yuhao Wang Book 2014 Springer Science+Business Media New York 2014 E

Racket

書目名稱Design Exploration of Emerging Nano-scale Non-volatile Memory影響因子(影響力)




書目名稱Design Exploration of Emerging Nano-scale Non-volatile Memory影響因子(影響力)學(xué)科排名




書目名稱Design Exploration of Emerging Nano-scale Non-volatile Memory網(wǎng)絡(luò)公開度




書目名稱Design Exploration of Emerging Nano-scale Non-volatile Memory網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Design Exploration of Emerging Nano-scale Non-volatile Memory被引頻次




書目名稱Design Exploration of Emerging Nano-scale Non-volatile Memory被引頻次學(xué)科排名




書目名稱Design Exploration of Emerging Nano-scale Non-volatile Memory年度引用




書目名稱Design Exploration of Emerging Nano-scale Non-volatile Memory年度引用學(xué)科排名




書目名稱Design Exploration of Emerging Nano-scale Non-volatile Memory讀者反饋




書目名稱Design Exploration of Emerging Nano-scale Non-volatile Memory讀者反饋學(xué)科排名

Pantry

BILIO

mastoid-bone

anarchist

l analysis and practical examples to illustrate design methodologies;.? Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors. .978-1-4939-5497-1978-1-4939-0551-5

Blasphemy

Blasphemy

Book 2014 on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/syste

在前面

一再遛

Hiroyuki Motomura,Mizuki Matsunuma issue, and the ultimate solution requires a breakthrough on memory technology. Fortunately, many newly introduced emerging nonvolatile memory technologies have exhibited great potential for the future universal memory. This chapter reviews the existing semiconductor memory technologies as well as the emerging nonvolatile memory technologies.

Insulin

Laboratory Studies of Energy Budgetstion. In this chapter, three different memory cell designs, crossbar structure for ReRAM, 1T1R structure for STT-RAM, and tape-like structure for domain-wall nanowire, are discussed with the agreeing readout circuits illustrated. Their performance models are presented as well if they are different from traditional designs.