Titlebook: Defects in SiO2 and Related Dielectrics: Science and Technology; G. Pacchioni,L. Skuja,D. L. Griscom Book 2000 Springer Science+Business M

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Fault Diagnosis of Stochastic Systemsnsic defects (as oxygen vacancies) by changing the thermochemical conditions during the material synthesis [2]. Indeed, Ge and Sn doping cause perturbations in the structural and defect-related properties, and these are important for the occurrence of photoconversion of optically active defects and

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OPTICAL PROPERTIES OF DEFECTS IN SILICAeguides or ultraviolet (UV)- transmitting windows. However, optical measurements alone usually do not give enough information to establish the origin and atomic structure of the respective point defects.

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A DEMI-CENTURY OF MAGNETIC DEFECTS IN a-QUARTZtempt to duplicate these compendia, but will update them to some extent. A second major goal is to point out some of the present problems and conundrums in this area of research, as seen through the (somewhat myopic) eyes of the author, and to establish the crucial need for further research effort expended on the quartz single-crystal system.

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CHANGE OF SPECTROSCOPIC AND STRUCTURAL PROPERTIES OF GERMANOSILICATE GLASS UNDER MECHANICAL COMPRESSuate model for germanium oxygen-deficient centre with absorption band centred at 5.12 eV. Photobleaching of this defect is presumably accompanied by breaking of sixfold tetrahedra rings in the structure of germanosilicate glass and by creation of threefold rings.

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Book 2000turing process or byexposure to ionizing radiation. They can also be deliberately createdto exploit new technologies. .This book provides a general description of the influence that pointdefects have on the global properties of the bulk material and theirspectroscopic characterization through ESR and optical spectroscopy.

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