Titlebook: Defect Complexes in Semiconductor Structures; Proceedings of the I J. Giber,F. Beleznay,J. László Conference proceedings 1983 Springer-Verl

Agitated

書目名稱Defect Complexes in Semiconductor Structures影響因子(影響力)




書目名稱Defect Complexes in Semiconductor Structures影響因子(影響力)學(xué)科排名




書目名稱Defect Complexes in Semiconductor Structures網(wǎng)絡(luò)公開度




書目名稱Defect Complexes in Semiconductor Structures網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Defect Complexes in Semiconductor Structures被引頻次




書目名稱Defect Complexes in Semiconductor Structures被引頻次學(xué)科排名




書目名稱Defect Complexes in Semiconductor Structures年度引用




書目名稱Defect Complexes in Semiconductor Structures年度引用學(xué)科排名




書目名稱Defect Complexes in Semiconductor Structures讀者反饋




書目名稱Defect Complexes in Semiconductor Structures讀者反饋學(xué)科排名

Canyon

Diverticulitis

指數(shù)

Photoluminescence of defect complexes in silicon,he photoluminescence (PL) technique: (i) Defects incorporating transition metal ions, (ii) defects related with oxygen and carbon doping the silicon and (iii) dislocation induced defects. We shall briefly discuss the state of the art from the PL point of view as well as present new data for all thre

哄騙

STEER

STEER

Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs,ting GaAs for the first time. These oscillations were found at DC electric fields above 500 Vcm., about one order of magnitude below the electric-field threshold for Gunn oscillations. The activation energy of the oscillation frequency was found to be 0.8 eV corresponding to the dominant electron tr

Iniquitous

FLING

ambivalence

Montserrat Corbera,Jaume Llibrellows quantitative calculations. The method is particularly powerful for classes of complexes such as aggregates of identical point defects when the electronic structure of the primary point defect is known and for defects in wide-gap materials. lie review results obtained for multivacancies in Si and for several defects in SiO..