Titlebook: Deep Ultraviolet LEDs; Understanding the Lo Zi-Hui Zhang,Chunshuang Chu,Yonghui Zhang Book 2019 The Author(s), under exclusive license to S

高談闊論

沉思的魚(yú)

Development Finance and Policy Reformare grown, we shall avoid using the p-AlGaN/p-GaN hole injection layer. The p-AlGaN/p-GaN hole injection layer can have remarkably hole depletion effect at the interface for those growth orientations except the [0001] orientation.

俗艷

可卡

Development Finance and Policy Reformhe removal of the p-GaN layer can yield a high LEE without guaranteeing the enhanced wall plug efficiency in the same time. Thus, even more effort shall be made to achieve excellent ohmic contact for DUV LEDs.

陰險(xiǎn)

Introduction,deep ultraviolet light-emitting diodes (DUV LEDs) promises the complete replacement for mercury-based fluorescence light tubes and this guarantees that the Minamata Convention on Mercury can be fulfilled by the end of the year of 2020. Therefore, developing high-efficiency AlGaN based DUV LEDs is re

brachial-plexus

無(wú)孔

符合規(guī)定

HAVOC

Enhance the Electron Injection Efficiency for DUV LEDs,m three aspects: (1) electrons cannot be consumed by forming electron-hole pairs and recombine radiatively in the active region, which is due to the insufficient hole injection, (2) the electron have larger mobility and are more mobile, (3) The conduction band offset between the AlGaN based quantum

Ibd810