Titlebook: Crystal Pulling from the Melt; Donald T. J. Hurle Book 1993 Springer-Verlag Berlin Heidelberg 1993 Kristallchemie.Kristallisation.Kristall

無力向前

書目名稱Crystal Pulling from the Melt影響因子(影響力)




書目名稱Crystal Pulling from the Melt影響因子(影響力)學科排名




書目名稱Crystal Pulling from the Melt網(wǎng)絡公開度




書目名稱Crystal Pulling from the Melt網(wǎng)絡公開度學科排名




書目名稱Crystal Pulling from the Melt被引頻次




書目名稱Crystal Pulling from the Melt被引頻次學科排名




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書目名稱Crystal Pulling from the Melt年度引用學科排名




書目名稱Crystal Pulling from the Melt讀者反饋




書目名稱Crystal Pulling from the Melt讀者反饋學科排名

儀式

SLUMP

Elements of the Process,t of the heater power, a crystal of the desired diameter can be grown. The whole assembly is maintained in an envelope which permits control of the ambient gas and enables visual observation of the crystal to be made. Figure 2.2 shows a small silicon single crystal being pulled from a melt contained in a silica crucible heated by RF induction.

失眠癥

FLASK

Book 1993process, the increase in importance and size of the industry has led to basic research into the fundamentals of the process - particularly the modelling of heat and mass transfer. The book has been written by the recognized authority on Czochralski crystal-growth techniques. It is an attempt to stre

paleolithic

paleolithic

Future Developments,tact with molten silicon sets a practical limit to any pseudo-continuous process with this material. Further developments in the control of oxygen and carbon distribution in silicon are required. Achievments of these goals may involve the use of a cusped magnetic field but that is, at present, not clearly resolved.

摻和

empirical process, the increase in importance and size of the industry has led to basic research into the fundamentals of the process - particularly the modelling of heat and mass transfer. The book has been written by the recognized authority on Czochralski crystal-growth techniques. It is an attem

otic-capsule

Techniques and Technology,ifferent heaters, chambers etc. Commercial pullers, on the other hand, are designed for one specific material; indeed often for just one specific size and specification of single crystal of that material.

諂媚于性

Heat Transport,-melt interface as a thermodynamic phase boundary whose shape represents the solution of the problem and not a boundary condition. Such problems are known as Stefan problems (see for example Ockendon and Tayler [79]). First, though, we determine the temperature field in the cooling crystal.