Titlebook: Crucial Issues in Semiconductor Materials and Processing Technologies; S. Coffa,F. Priolo,J. M. Poate Book 1992 Springer Science+Business

臨時抱佛腳

0168-132X integrated circuits is increasing considerably because ofthe continuous dimensional shrinkage to improve efficiency andfunctionality. This evolution in design rules poses real challengesfor the materials scientists and processing engineers. Materials,defects and processing now have to be understood

鋸齒狀

d to alloys. An insight is given on recent developments: strained epilayers and quantum wells. We then review the materials of interest for optoelectronic devices and detail those related to telecommunication applications, especially the InGaAsP and InGaAlAs quaternary systems.

Tracheotomy

rmal annealing in nitrogen were also shown. The experimental data can be interpreted in terms of the contributions of insulator-related structural defects and semiconductor-related defects induced by the plasma deposition process on the crystal surface.

covert

ingenue

Anchors, Spars and Intermediate Supports,l oxygen in the epitaxial layer, clearly indicating that solid state outdiffusion from the substrate occurs during film preparation. Furthermore the major consequence of outdiffusion, e.g. oxygen contamination of the epitaxial layer has been shown to produce precipitation phenomena inside the film, directly influencing its quality.

Ascendancy

heirloom

向前變橢圓

或者發(fā)神韻

Debility

Applications to Quantum Field Theory, revolution in the properties attainable in devices fabricated using these new growth techniques. This paper will present several key advances in materials preparation, and the application of this work.