Titlebook: Compact Transistor Modelling for Circuit Design; Henk C. Graaff,Fran?ois M. Klaassen Book 1990 Springer-Verlag/Wien 1990 SPICE.circuit.cir

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Lateral , Transistor Models,The use of lateral . transistors is widespread in linear integrated circuits. They are applied as active load devices, current sources, level shifters etc. [5.1]. Furthermore they are an integral part of integrated injection logic (...) circuits [5.2].

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https://doi.org/10.1007/978-3-7091-9043-2SPICE; circuit; circuit design; integrated circuit; model; modeling; simulation; transistor

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Compact Models for Vertical Bipolar Transistors,ions which together define a given model. This description will be limited to vertical . transistors for integrated circuits, including the substrate effects of the parasitic . transistor. Vertical . transistors also exist, but they require no new fundamental additions.

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?Aufsiedlungsmanagement“ in Neubauquartierenoncept in mind the designer actually built his circuit on a (printed-)circuit board with discrete elements (capacitors, resistors, inductors, transistors, etc.) and checked its electrical performance. If the result was not satisfactory, the discrete elements were changed in value and/or type, until

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https://doi.org/10.1007/978-3-658-25759-0the validity of the charge control principle. After that we will show how the various device phenomena like main currents, Early effect, depletion capacitance etc., can be described by means of compact, explicit and analytical mathematical expressions. Unless stated otherwise, the device structure c

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https://doi.org/10.1007/978-3-322-94543-3ET. Usually devices of this class are made on a uniform doped substrate or on a substrate with an implanted channel region. Examples are .-channel transistors with or without a .-type implanted layer in a .-type substrate and .-channel transistors with or without a shallow .-type implanted layer in

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https://doi.org/10.1007/978-3-322-94543-3perate in the on state at zero gate bias [8.1, 8.2]. Usually this class of devices is called depletion-type MOSFET. In practice mainly .-channel devices are applied. When the device is only used as a load, the characteristics can be satisfactorily described by an enhancement model with an appropriat