Titlebook: Chemical Vapor Deposition; Thermal and Plasma D Srinivasan Sivaram Book 1995 Springer Science+Business Media New York 1995 chemistry.deposi

鉗子

hallow

Reactor Design for Thermal CVD,ient for the design of a commercial reactor from first principles. However, for the modification of an existing reactor for the purpose of tailoring film properties or for the construction of laboratory prototypes, this discussion will be adequate.

Addictive

最初

CVD of Semiconductors,osition, such as evaporation, PVD, and CVD. However, CVD, liquid phase epitaxy and molecular beam epitaxy are the most commonly used methods of epitaxial thin film growth. In this chapter, we will examine the role of the chemistry, process conditions, and the reactor, that promote epitaxial growth of the semiconducting thin film.

神經(jīng)

Chemical Equilibrium and Kinetics,ommonly referred to as thermal CVD. We will begin our discussion of thermal CVD by concentrating on two constraints placed on the reaction by the economics of a manufacturing process: how much of the reactants are converted to products and how quickly this can be accomplished.

神圣將軍

Processing Plasmas and Reactors,ll use a simple DC diode plasma in order to illustrate electron production and loss mechanisms. However, since most useful CVD processes use AC power sources, we will also examine RF and microwave discharges.