Titlebook: Charge-Trapping Non-Volatile Memories; Volume 1 – Basic and Panagiotis Dimitrakis Book 2015 Springer International Publishing Switzerland 2

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3D NAND Flash Architectures,nd compact form factor, it has been widely adopted as a necessary key component of most modern consumer electronics. Now it even penetrates into the enterprise applications, and it is expected that NAND Flash will continue to enjoy a brilliant market growth in the near future.

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Studies of Landmark Location Uncertainty,ories, while for the CT memories charge storage takes place in localized traps within a dielectric layer (typically made of silicon nitride). As recalled in Sect. 3.2 of this chapter, the CT memories have been the focus of intense research and product development since the early demonstration of MNO

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Studies of Landmark Location Uncertainty,r structure with metal or semiconductor nanoparticles or nanoparticle/polymer composites embedded in the single polymer layer. Several mechanisms have been proposed for the resistive switches, including the electric-field induced charge transfer between nanoparticles and another component, the charg

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AVERT

Bridle

Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles,r structure with metal or semiconductor nanoparticles or nanoparticle/polymer composites embedded in the single polymer layer. Several mechanisms have been proposed for the resistive switches, including the electric-field induced charge transfer between nanoparticles and another component, the charg

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