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Titlebook: Channel and Source Coding for Non-Volatile Flash Memories; Mohammed Rajab Book 2020 The Editor(s) (if applicable) and The Author(s), under

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樓主: 揭發(fā)
21#
發(fā)表于 2025-3-25 07:07:43 | 只看該作者
22#
發(fā)表于 2025-3-25 10:27:53 | 只看該作者
P. E. Schoen,P. Yager,R. G. Priestensity, low-latency, fast-programming and erase operation speeds at low costs. Flash memories are mechanical shock-resistant non-volatile memories. Therefore, flash memories are very interesting for many devices that require high data reliability, e.g. for industrial robotics, scientific and medical
23#
發(fā)表于 2025-3-25 11:38:27 | 只看該作者
L. Ter-Minassian-Saraga,S. J. Abitbouls used as channel model for flash memories and BCH codes are used for error correction [94, 72]. Recently, different concatenated coding schemes were proposed that have low error correcting capabilities.
24#
發(fā)表于 2025-3-25 16:20:24 | 只看該作者
Introduction,ensity, low-latency, fast-programming and erase operation speeds at low costs. Flash memories are mechanical shock-resistant non-volatile memories. Therefore, flash memories are very interesting for many devices that require high data reliability, e.g. for industrial robotics, scientific and medical instrumentation.
25#
發(fā)表于 2025-3-25 20:48:06 | 只看該作者
Product codes and generalized concatenated codes for flash memories,s used as channel model for flash memories and BCH codes are used for error correction [94, 72]. Recently, different concatenated coding schemes were proposed that have low error correcting capabilities.
26#
發(fā)表于 2025-3-26 02:58:20 | 只看該作者
27#
發(fā)表于 2025-3-26 04:24:07 | 只看該作者
P. E. Schoen,P. Yager,R. G. Priestensity, low-latency, fast-programming and erase operation speeds at low costs. Flash memories are mechanical shock-resistant non-volatile memories. Therefore, flash memories are very interesting for many devices that require high data reliability, e.g. for industrial robotics, scientific and medical instrumentation.
28#
發(fā)表于 2025-3-26 08:44:10 | 只看該作者
L. Ter-Minassian-Saraga,S. J. Abitbouls used as channel model for flash memories and BCH codes are used for error correction [94, 72]. Recently, different concatenated coding schemes were proposed that have low error correcting capabilities.
29#
發(fā)表于 2025-3-26 12:39:20 | 只看該作者
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30#
發(fā)表于 2025-3-26 18:28:28 | 只看該作者
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