Titlebook: Channel and Source Coding for Non-Volatile Flash Memories; Mohammed Rajab Book 2020 The Editor(s) (if applicable) and The Author(s), under

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Schriftenreihe der Institute für Systemdynamik (ISD) und optische Systeme (IOS)http://image.papertrans.cn/c/image/223849.jpg

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https://doi.org/10.1007/978-94-010-2185-2The introduction of MLC and TLC technologies reduced the reliability of flash memories significantly compared with SLC flash [65, 5]. With MLC and TLC flash cells the error probability varies for the different states. Hence asymmetric models are required to characterize the flash channel, e.g. the binary asymmetric channel (BAC) [66, 20, 21, 8].

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Ion-Binding Phenomena of Polyelectrolytes,In recent years, mostly hard-input algebraic decoding was used for error correction in flash memories [137, 94, 72]. ECC based on soft-input decoding can significantly improve the reliability of flash memories.

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Polyelectrolytes and NanoparticlesThis dissertation has proposed various applicable techniques to improve the reliability of NAND flash memory. In summary, this dissertation makes the following contributions.

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