Titlebook: CMOS VLSI Engineering; Silicon-on-Insulator James B. Kuo,Ker-Wei Su Book 1998 Springer Science+Business Media Dordrecht 1998 CMOS.VLSI.anal

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書目名稱CMOS VLSI Engineering影響因子(影響力)




書目名稱CMOS VLSI Engineering影響因子(影響力)學(xué)科排名




書目名稱CMOS VLSI Engineering網(wǎng)絡(luò)公開度




書目名稱CMOS VLSI Engineering網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱CMOS VLSI Engineering被引頻次




書目名稱CMOS VLSI Engineering被引頻次學(xué)科排名




書目名稱CMOS VLSI Engineering年度引用




書目名稱CMOS VLSI Engineering年度引用學(xué)科排名




書目名稱CMOS VLSI Engineering讀者反饋




書目名稱CMOS VLSI Engineering讀者反饋學(xué)科排名

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H. V. Grushevskaya,G. G. Krylovo bulk CMOS devices, SOI CMOS devices have been reknown for their superior performance in smaller second order effects, no latchup, and higher speed. Due to their unique structure, SOI CMOS devices have performance quite different from the bulk ones. In this chapter, fundamental behaviors of SOI CMO

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Sofiane El-Kirat-Chatel,Audrey Beaussarthe buried oxide isolation structure, accumulation-mode devices are also important. In this chapter, first, the DC and the capacitance models for the accumulation-mode SOI MOS devices are presented. Recently, the trends on the fully-depleted SOI CMOS devices are toward using very thin silicon thin-fi