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Titlebook: CMOS Processors and Memories; Krzysztof Iniewski Book 2010 Springer Science+Business Media B.V. 2010 CMOS.DRAM.FPGA.Field Programmable Gat

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21#
發(fā)表于 2025-3-25 07:21:38 | 只看該作者
Book 2010portunities in memories and processor are discussed. Emerging materials that can take system performance beyond standard CMOS, like carbon nanotubes, graphene, ferroelectrics and tunnel junctions are explored.. .CMOS Processors and Memories. is divided into two parts: processors and memories. In the
22#
發(fā)表于 2025-3-25 09:11:18 | 只看該作者
Book 2010e framework. This particular methodology involves: analyzing the computational cost and exploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures...The secon
23#
發(fā)表于 2025-3-25 14:21:58 | 只看該作者
Design of High Performance Low Power Microprocessors
24#
發(fā)表于 2025-3-25 18:57:10 | 只看該作者
Towards High-Performance and Energy-Efficient Multi-core Processors
25#
發(fā)表于 2025-3-25 22:35:14 | 只看該作者
26#
發(fā)表于 2025-3-26 03:08:53 | 只看該作者
CMOS-based Spin-Transfer Torque Magnetic Random Access Memory (ST–MRAM)
27#
發(fā)表于 2025-3-26 06:51:15 | 只看該作者
28#
發(fā)表于 2025-3-26 10:47:20 | 只看該作者
Magnetization Switching in Spin Torque Random Access Memory: Challenges and Opportunitiesors from nano-second to second region are measured and modeled. Microscopic quantum electronic spin transport model and macroscopic stochastic magnetization dynamics model are combined to study spin torque induced magnetization switching. Coupled micro-magnetic model and dynamic circuit model are us
29#
發(fā)表于 2025-3-26 15:10:19 | 只看該作者
1872-082X ploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures...The secon978-94-007-3304-6978-90-481-9216-8Series ISSN 1872-082X Series E-ISSN 2197-1854
30#
發(fā)表于 2025-3-26 18:58:37 | 只看該作者
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