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Titlebook: Built-in-Self-Test and Digital Self-Calibration for RF SoCs; Sleiman Bou-Sleiman,Mohammed Ismail Book 2012 Springer Science+Business Media

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期刊全稱Built-in-Self-Test and Digital Self-Calibration for RF SoCs
影響因子2023Sleiman Bou-Sleiman,Mohammed Ismail
視頻videohttp://file.papertrans.cn/192/191906/191906.mp4
發(fā)行地址Applies Built-in-Self-Test (Bi. ST) and Built-in-Self-Calibration (Bi..SC) to real applications in nanometer wireless radio design Provides on-chip testing capabilities as well as on-the-fly calibrati
學(xué)科分類SpringerBriefs in Electrical and Computer Engineering
圖書封面Titlebook: Built-in-Self-Test and Digital Self-Calibration for RF SoCs;  Sleiman Bou-Sleiman,Mohammed Ismail Book 2012 Springer Science+Business Media
影響因子This book will introduce design methodologies, known as Built-in-Self-Test (BiST) and Built-in-Self-Calibration (BiSC), which enhance the robustness of radio frequency (RF) and millimeter wave (mmWave) integrated circuits (ICs). These circuits are used in current and emerging communication, computing, multimedia and biomedical products and microchips. The design methodologies presented will result in enhancing the yield (percentage of working chips in a high volume run) of RF and mmWave ICs which will enable successful manufacturing of such microchips in high volume.?
Pindex Book 2012
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Built-in-Self-Test and Digital Self-Calibration for RF SoCs
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Built-in-Self-Test and Digital Self-Calibration for RF SoCs978-1-4419-9548-3Series ISSN 2191-8112 Series E-ISSN 2191-8120
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2191-8112 on-chip testing capabilities as well as on-the-fly calibratiThis book will introduce design methodologies, known as Built-in-Self-Test (BiST) and Built-in-Self-Calibration (BiSC), which enhance the robustness of radio frequency (RF) and millimeter wave (mmWave) integrated circuits (ICs). These circu
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2191-8112 ill result in enhancing the yield (percentage of working chips in a high volume run) of RF and mmWave ICs which will enable successful manufacturing of such microchips in high volume.?978-1-4419-9547-6978-1-4419-9548-3Series ISSN 2191-8112 Series E-ISSN 2191-8120
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