Titlebook: Beyond Binary Memory Circuits; Multiple-Valued Logi Zarin Tasnim Sandhie,Farid Uddin Ahmed,Masud H. Ch Book 2022 The Editor(s) (if applicab

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1932-3166 and systems. The discussion includes the basic features, prospects, and challenges of each technology, while highlighting the significant works done on different branches of MVL memory architecture, such as sequential circuits, random access memory, Flash memory, etc.978-3-031-16197-1978-3-031-16195-7Series ISSN 1932-3166 Series E-ISSN 1932-3174

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https://doi.org/10.1007/978-1-4419-1102-5miconductor-Field-Effect-Transistor (MOSFET), Resonant-Tunneling-Diode (RTD), Carbon-Nano-Tube-Field-Effect-Transistor (CNTFET), Graphene-Nano-Ribbon Field-Effect-Transistor (GNRFET) etc., which are explored for binary sequential logic circuits, are also investigated for multi-valued sequential logic circuits.

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Book 2022ospects, and challenges of each technology, while highlighting the significant works done on different branches of MVL memory architecture, such as sequential circuits, random access memory, Flash memory, etc.

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1932-3166 ltiple-valued memory cells, such as sequential circuit, SRAMThis book provides readers with an overview of the fundamental definitions and features of Multiple-Valued Logic (MVL). The authors include a brief discussion of the historical development of MVL technologies, while the main goal of the boo

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https://doi.org/10.1007/978-94-6265-455-6ew of MVL based static and dynamic RAMs. Basic design and operation principles of ternary Static RAM (SRAM), ternary Dynamic RAM (DRAM), and Multi-Level-DRAM (MLDRAM) are illustrated. A comparative analysis of the state-of-the-art MVL RAM designs is also included.