Titlebook: Atomic and Nanometer-Scale Modification of Materials; Fundamentals and App Phaedon Avouris Book 1993 Springer Science+Business Media Dordre

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Was Führungskr?fte im Vertrieb bewegtlectric field due to the field gradients associated with step edges. We have exploited a similar phenomenon, the large field gradients in the vicinity of the STM tip, to induce the directional diffusion of Cs and K atoms adsorbed on room temperature GaAs(110) and InSb(110). The geometric and electro

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Was Führungskr?fte im Vertrieb bewegtt a separation of ~1 nm and apply an appropriate voltage pulse to it, we can extract a single Si atom from a predetermined position routinely. The extracted Si atoms are redeposited to the surface with a certain probability. The redeposited Si atom can be displaced intentionally on the surface. In c

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Die roten Linien der Führungskr?fte scanning tunneling microscopy (STM) by creating electrically active structures on a nanometer-scale. The intense electron beam provided by the tip of the STM leads to characteristic changes of the layer conductivity (electrically active structures), which is interpreted as to arise from local, elec

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Konflikte in neuen Arbeitswelten,ng. The resulting vibrational distribution is approximately Maxwell-Boltzmann, with a characteristic vibrational temperature. A simple expression is given for this vibrational temperature as a function of the tunneling current. Calculations indicate that vibrational heating by inelastic tunneling pl

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