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Titlebook: Atomic Scale Interconnection Machines; Proceedings of the 1 Christian Joachim Conference proceedings 2012 Springer-Verlag Berlin Heidelberg

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樓主: energy
41#
發(fā)表于 2025-3-28 15:22:15 | 只看該作者
Atomically Precise Manufacturing: The Opportunity, Challenges, and Impact, can arrange the atoms the way we want” (Feynman, “There’s Plenty of Room at the Bottom”, speech on December 29th . at the annual meeting of the American Physical Society at the California Institute of Technology). Twenty years ago, Don Eigler of IBM, did arrange atoms the way he wanted (Eigler and
42#
發(fā)表于 2025-3-28 21:03:12 | 只看該作者
43#
發(fā)表于 2025-3-29 00:09:21 | 只看該作者
44#
發(fā)表于 2025-3-29 03:11:09 | 只看該作者
45#
發(fā)表于 2025-3-29 11:10:48 | 只看該作者
Multi-Probe Characterization of 1D and 2D Nanostructures Assembled on Ge(001) Surface by Gold Atom and conductive mesa pads as components in electronic circuits. For such applications, we need a good knowledge of structural and electronic properties of 1D and 2D conductive nanostructures fabricated on large and/or moderate band gap semiconductor surfaces. This chapter is reporting on case studie
46#
發(fā)表于 2025-3-29 12:00:35 | 只看該作者
47#
發(fā)表于 2025-3-29 18:13:33 | 只看該作者
Silicon Surface Conductance Investigated Using a Multiple-Probe Scanning Tunneling Microscope,Si(111)-1?×?1 surfaces. Metallic contacts with points spaced?<1?μm, deposited via electron-beam lithography, were used as contact points for two probes, while a central STM tip imaged the region between the contacts. A novel imaging method measuring the fraction of the tunneling current flowing to e
48#
發(fā)表于 2025-3-29 21:28:06 | 只看該作者
49#
發(fā)表于 2025-3-30 01:36:36 | 只看該作者
50#
發(fā)表于 2025-3-30 05:42:52 | 只看該作者
Solid State Nano Gears Manipulations,h vacuum (UHV) scanning tunneling microscopy (STM) are used to maneuver the gears. The aim is to bridge the gap between the current solid state gears and the now available nanoscale gears. As in many technology integrations, miniaturization is a way to boost efficiency and an opening to new applicat
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