Titlebook: Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces; Weronika Walkosz Book 2011 The Editor(s) (if applicable) a

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Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces

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Silicon Nitride Ceramics,e applications [.–.]. Good resistance to oxidation and corrosive environments, low coefficient of friction and thermal expansion, negligible creep, and high decomposition temperature are some of these important properties. Because of these, silicon nitride (especially itspolymorph) is widely used in

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Theoretical Methods and Approximations,ximation is stated. Next, an overview of the basic formulation of density functional theory (DFT) is given, underlying its merits in describing various materials and their properties, but also pointing out the aspects which need further improvements. The Kohn–Sham ansatz, which provides a means of c

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Overview of Experimental Tools,n Microscopy (HREM), Z-contrast imaging, Electron Energy-Loss Spectroscopy (EELS), and spectrum imaging (SI). The latter three will be discussed in relation to Scanning TEM (STEM). The key aspects of these techniques will be described in detail, emphasizing their strengths and drawbacks. Moreover, v

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,Atomic-Resolution Study of the Interfacial Bonding at Si3N4/CeO2?δ Grain Boundaries,model, the age of the system is not changed by the repair. When additional information is available, the concept of a minimal repair has to be generalized, and in this paper, we look closer at some of the suggestions that have been put forward. A point process framework can be used to describe the g

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,Atomic-Resolution Study of β-Si3N4/SiO2 Interfaces,face in the absence of rare-earth elements to better understand their importance in stabilizing the ceramics open-ring termination discussed in Chap. 4. The chapter commences with an introduction to . interfaces, followed by a short summary of the experimental methods used in this study. Next, the r