Titlebook: Applied Scanning Probe Methods I; Bharat Bhushan,Harald Fuchs,Sumio Hosaka Book 2004 Springer-Verlag Berlin Heidelberg 2004 AFM.Material S

只看該作者 · 發(fā)表于 2025-3-23 15:43:05

AFM Characterization of Semiconductor Line Edge Roughnessn properties of the gate such as leakage current. The International Technology Roadmap for Semiconductors (ITRS) [6] specifies a physical gate length for 2002 of 75 nm and a maximum LER of 3.9 nm. The effect of LER on the function of an electronic gate has been modeled by several studies and these m

只看該作者 · 發(fā)表于 2025-3-23 18:24:49

只看該作者 · 發(fā)表于 2025-3-24 00:37:30

Tip Characterization for Dimensional Nanometrologyanufacturable because performance (speed, data density) improves with miniaturization. Advanced materials, ceramics, and composites increasingly may benefit from the assessment of grain size and other aspects of nanostructure.

只看該作者 · 發(fā)表于 2025-3-24 06:26:34

只看該作者 · 發(fā)表于 2025-3-24 09:04:05

只看該作者 · 發(fā)表于 2025-3-24 11:18:17

只看該作者 · 發(fā)表于 2025-3-24 17:06:02

只看該作者 · 發(fā)表于 2025-3-24 19:52:05

Book 2004ly comprehensive overview of SPM applications, now that industrial applications span topographic and dynamical surface studies of thin-film semiconductors, polymers, paper, ceramics, and magnetic and biological materials. After laying the theoretical background of static and dynamic force microscopi

只看該作者 · 發(fā)表于 2025-3-25 00:27:48

		自動(dòng)登錄	找回密碼
密碼			To register

關(guān)于派博傳思			派博傳思旗下網(wǎng)站			友情鏈接
派博傳思介紹	公司地理位置	論文服務(wù)流程	影響因子官網(wǎng)	吾愛論文網(wǎng)	大講堂	北京大學(xué)	Oxford Uni.	Harvard Uni.
發(fā)展歷史沿革	期刊點(diǎn)評(píng)	投稿經(jīng)驗(yàn)總結(jié)	SCIENCEGARD	IMPACTFACTOR	派博系數(shù)	清華大學(xué)	Yale Uni.	Stanford Uni.
\|Archiver\|手機(jī)版\|小黑屋\| 派博傳思國(guó)際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-13 08:23
Copyright © 2001-2015 派博傳思京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved