Titlebook: Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor; Iraj Sadegh Amiri,Mahdiar Ghadiry Book 2018 The A

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Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

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2191-530X s of this,simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used 978-981-10-6549-1978-981-10-6550-7Series ISSN 2191-530X Series E-ISSN 2191-5318

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2191-530X nsistors (GNR-based FETs).Discusses an analytical model for This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionizati

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Luis Moraleda-Novo,Primitivo Gómez-Carderoficient of GNR, and finally, Sect.?. presents analytical approaches to calculate breakdown voltage of single- and double-gate GNRFETs. In addition, some parts of the results are presented here for the purpose of clarification and will not be repeated in the results and discussion chapter.

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Methodology for Modelling of Surface Potential, Ionization and Breakdown of Graphene Field-Effect Tficient of GNR, and finally, Sect.?. presents analytical approaches to calculate breakdown voltage of single- and double-gate GNRFETs. In addition, some parts of the results are presented here for the purpose of clarification and will not be repeated in the results and discussion chapter.

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