Titlebook: Advances in VLSI, Communication, and Signal Processing; Select Proceedings o David Harvey,Haranath Kar,Vijaya Bhadauria Conference proceedi

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Advances in VLSI, Communication, and Signal Processing978-981-15-6840-4Series ISSN 1876-1100 Series E-ISSN 1876-1119

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4.2.3 Allyl radicals containing Cl,on needs to be minimized. Therefore, an SRAM cell desires the new techniques and architecture, which can operate at very low sub-threshold voltage. In this paper, PN-based 10T SRAM cell (PPN10T) and transmission-based 8T (TG8T) have been analyzed and proposed a new 8T SRAM cell (P8T) to overwhelm th

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