Titlebook: Advances in VLSI and Embedded Systems; Select Proceedings o Anand D. Darji,Deepak Joshi,Ray Sheriff Conference proceedings 2023 The Editor(

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https://doi.org/10.1057/9781137480910sults, the proposed modular reduction unit is improved in terms of total cell count and dynamic power consumption by (56% and 46%) over the conventional and modified conventional methods. Power Delay Product and Energy delay Product of the proposed MRU is enhanced by (~56%,?~?44%) over the conventional and modified conventional methods.

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Obtaining an initial estimate , of ,10?T SRAM cell has the least variation in static performance. Another parameter used to compare the performance of the cells is leakage current. This identifies 9?T SRAM bit cell has the maximum leakage current with 635 pA and 630 pA for Q?=?‘0’ and ‘1’ respectively.

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Limited Memory Quasi-Newton Algorithms,r . variation from 0 to 50 mA. The designed LDO voltage regulator working with a reference voltage of 0.72 V offers a PSRR 39.6 dB for frequency up to 210 kHz. The designed TFET-based LDO voltage regulator consumes 113.86 .W of power.

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Modeling and Analysis of Low Power High-Speed Phase Detector and Phase Frequency Detector Using Nan4?V. Aspect ratio (width to length ratios) is varied in the range of 1–5. Tanner T-Spice tool is used for simulation. Compared with the several techniques proposed before, the presented circuit gives the best tradeoff to choose between different channel lengths according to user requirements.

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