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Titlebook: Advances in Thin Films, Nanostructured Materials, and Coatings; Selected Papers from Alexander D. Pogrebnjak,Valentine Novosad Conference p

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樓主: Sentry
41#
發(fā)表于 2025-3-28 15:03:33 | 只看該作者
,The Role of a Thin Aluminum Film in the Reconstruction of Silicon’s Near-Surface Layers,e centers of dislocation-related electroluminescence of structures based on p-Si. Additional elastic deformation (for several hours) of silicon leads to an increase in their concentration. This can be used to increase the efficiency of the luminescence of silicon monocrystals in the infrared region.
42#
發(fā)表于 2025-3-28 20:42:01 | 只看該作者
43#
發(fā)表于 2025-3-28 23:49:45 | 只看該作者
44#
發(fā)表于 2025-3-29 05:49:39 | 只看該作者
45#
發(fā)表于 2025-3-29 08:43:02 | 只看該作者
https://doi.org/10.1007/978-1-4612-0849-5tribution of particles of structural phases and the absence of extended dislocation clusters—zones of crack incipience and propagation. Such substructure of welding joints of high-strength structural steel produced by laser-arc welding provides the high complex of strength properties and crack resistance.
46#
發(fā)表于 2025-3-29 12:54:12 | 只看該作者
Introduction to Concurrent Zero-Knowledge,per films deposited on glass substrates at a temperature of 300?°C with an electrical resistivity R?
47#
發(fā)表于 2025-3-29 18:33:59 | 只看該作者
Thin Film Deposition by Plasma Beam of a Vacuum Arc with Refractory Anodes,e deposition rate measured in 300?A HRAVAs at distances of 80?mm from the arc axis, to be 3.6; 1.4 and 1.8?μm/min for Cu, Cr and Ti cathodes respectively. Interconnector trenches (100?nm wide ×300?nm deep) on microelectronic wafers were filled using a Cu HRAVA at a rate of 0.5?μm/min.
48#
發(fā)表于 2025-3-29 22:44:20 | 只看該作者
Multilayer Design of CrN/MoN Superhard Protective Coatings and Their Characterisation,n cubic phases of γ-Mo.N and cubic CrN were detected. It was observed that the crystal growth orientation changes while the negative bias voltage of the substrate decreases. The maximum values of hardness (38–42?GPa) among the studied samples were obtained for coatings with a minimal individual layer thickness of 20?nm deposited at U.?=??20?V.
49#
發(fā)表于 2025-3-30 03:45:22 | 只看該作者
50#
發(fā)表于 2025-3-30 07:43:39 | 只看該作者
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