Titlebook: Advances in Solid State Physics 39; Bernhard Kramer Conference proceedings 1999 Springer-Verlag Berlin Heidelberg 1999 condensed matter.co

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書(shū)目名稱(chēng)Advances in Solid State Physics 39影響因子(影響力)




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書(shū)目名稱(chēng)Advances in Solid State Physics 39被引頻次




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書(shū)目名稱(chēng)Advances in Solid State Physics 39讀者反饋




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AVOW

Dictation

生銹

Organic electroluminescent devices,bination while forming an exciton, exciton diffusion and decay. If an OLED is embedded in a planar Fabry-Perot microcavity, a spatial redistribution and a slight enhancement of the integrated emission intensity is obtained. Finally, energy level determination by ultraviolet photoelectron spectroscop

連累

,Ge and Si nanocrystals—New ways to luminescence structures,model to Ge/SiO. superlattices is demonstrated. Enhancement in band gap luminescence is discussed for films with nanocrystal sizes near the Bohr radius. First results of investigations on Er doped superlattices are presented.

現(xiàn)暈光

Pranjal Bhatt,Sujata,Suman K. Mitrald coupling between the Sb nano-aperture and recorded marks in the GeSbTe film. When a wavelength of 635 nm and an optical pickup used in a current DVD with a NA of 0.6 were applied for recording and readout of tiny marks beyond the diffraction limit (≈300 nm) of the system, small marks with a size

Graphite

https://doi.org/10.1007/978-981-16-1086-8s (E≈5–2000 MeV/u), operated at temperatures of 1.5–2 K, and for hard x-rays (E≈50–100 keV), operated at temperatures around 50–100 mK, is presented. For both cases relative energy resolutions of ΔE/E=1–2·10. have been obtained, which already represents a considerable improvement if compared to conv

nonsensical

摘要

Sumanth Sadu,Shiv Ram Dubey,S. R. Sreejabination while forming an exciton, exciton diffusion and decay. If an OLED is embedded in a planar Fabry-Perot microcavity, a spatial redistribution and a slight enhancement of the integrated emission intensity is obtained. Finally, energy level determination by ultraviolet photoelectron spectroscop

小隔間

Piyush Samant,Atul Bansal,Ravinder Agarwalmodel to Ge/SiO. superlattices is demonstrated. Enhancement in band gap luminescence is discussed for films with nanocrystal sizes near the Bohr radius. First results of investigations on Er doped superlattices are presented.