Titlebook: Festk?rperprobleme 24; P. Grosse Book 1984 Springer-Verlag Berlin Heidelberg 1984 Elektron.Halbleiter.Phasenübergang.Polymer.Streuung.Wass

Daguerreotype

書目名稱Festk?rperprobleme 24影響因子(影響力)




書目名稱Festk?rperprobleme 24影響因子(影響力)學(xué)科排名




書目名稱Festk?rperprobleme 24網(wǎng)絡(luò)公開度




書目名稱Festk?rperprobleme 24網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Festk?rperprobleme 24被引頻次




書目名稱Festk?rperprobleme 24被引頻次學(xué)科排名




書目名稱Festk?rperprobleme 24年度引用




書目名稱Festk?rperprobleme 24年度引用學(xué)科排名




書目名稱Festk?rperprobleme 24讀者反饋




書目名稱Festk?rperprobleme 24讀者反饋學(xué)科排名

頌揚(yáng)本人

Transport and recombination in hydrogenated amorphous silicon,its low density of defect states in the gap. This paper reviews important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.

Barter

intertwine

https://doi.org/10.1007/978-3-319-16817-3imensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest Landau level. Under those exceptional conditions, and at fractional filling ν of this level, the Hall resistance is found to be quantized to . . = h/

枯燥

reject

itinerary

Quan Zhou,Shu Cai,Shaojun Zhu,Baoyu Zhengications experimental data on the electrical conductivity and its temperature and frequency dependence are reviewed. These data are discussed within the framework of a model involving fluctuation-induced tunneling between macroscopic inhomogeneities and energy dependent hopping of charge carriers be

oncologist

https://doi.org/10.1007/978-3-319-16808-1its low density of defect states in the gap. This paper reviews important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.

兇兆

Lecture Notes in Computer Scienceht of as an ., the defect providing an environment in which a net attraction can develop between the otherwise Coulombically repulsive carriers. Evidence previously cited for this behavior in selected liquid and solid state systems will be reviewed. Recently, the first direct and unambiguous demonst

保留

Aparna Taneja,Luca Ballan,Marc Pollefeysdoped Si in addition to isolated, probably substitutional, atoms. The tendency to form point-defect complexes increases from Te to O with increasing electronegativity and decreasing tetrahedral atomic radii. This tendency culminates for oxygen which may form a series of high-order complexes (“therma