Titlebook: Advances in Rapid Thermal and Integrated Processing; Fred Roozeboom Book 1996 Springer Science+Business Media B.V. 1996 Metall.Semiconduct

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Summary, Conclusions, and Future Work,tional silicon-epi growth with its high deposition temperatures is becoming more and more incompatible with modern wafer processing. Outdiffusion of dopants and autodoping preclude the use of conventional epi in tailoring dopant profiles in e.g. the base of a bipolar transistor.

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Rapid Thermal O2-Oxidation and N2O-Oxynitridation,espectively. I will compare and contrast current furnace oxidation technology with RTO technology, and come to the conclusion that there are several advantages to growing dielectrics at the higher temperatures that RTO can achieve. However, RTO must mature to be competitive with furnace oxidation.

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0168-132X plied physics and materials science. Here,the physics and engineering of this technology are discussed at thegraduate level. Three interrelated areas are covered. First, thethermophysics of photon-induced annealing of semiconductor and relatedmaterials, including fundamental pyrometry and emissivity

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https://doi.org/10.1007/978-3-030-68133-3g explored that involve substitute sources of energy for the deposition and growth chemistry. Over the years, photo-induced processing has in particular received considerable attention [1–3]. One advantage of photoprocessing is that the surface is not subjected to damaging ionic bombardment which can be the case in plasma assisted systems [4,5].