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Titlebook: Advanced High Voltage Power Device Concepts; B. Jayant Baliga Book 2012 Springer New York 2012 Emitter Switched Thyristor.Insulated Gate B

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發(fā)表于 2025-3-21 16:38:36 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
期刊全稱(chēng)Advanced High Voltage Power Device Concepts
影響因子2023B. Jayant Baliga
視頻videohttp://file.papertrans.cn/146/145646/145646.mp4
發(fā)行地址Provides the first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets.Includes analytical formulations for
圖書(shū)封面Titlebook: Advanced High Voltage Power Device Concepts;  B. Jayant Baliga Book 2012 Springer New York 2012 Emitter Switched Thyristor.Insulated Gate B
影響因子The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.
Pindex Book 2012
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Front Matterith the same mutation. Ophthalmologic management should include maintaining a clear visual axis, monitoring closely for amblyopia, and glaucoma. Patients with anterior segment dysgenesis should be evaluated by a geneticist for evaluation of possible systemic associated abnormalities and appropriate genetic counseling.
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Back Matternce between the initial and final energy of that atom, which in turn depends on the particular species of atom and its various electron orbits. Thus, different materials will produce lasers of different wavelenghts or energy (Fig. 6.1).
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