Titlebook: Advanced Gate Stacks for High-Mobility Semiconductors; Athanasios Dimoulas,Evgeni Gusev,Marc Heyns Book 2007 Springer-Verlag Berlin Heidel

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Umweltmanagement aus politischer Sichtated with the device miniaturization. Thus, much attention has recently been paid to the mobility enhancement technology through applying strain into CMOS channels. This chapter reviews this strained-Si CMOS technology with an emphasis on the mechanism of mobility enhancement due to strain. The devi

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Umweltmanagement aus politischer Sicht MOS device on the Si(110) surface, high-speed and low flicker noise p-MOSFETs can be realized. Furthermore, the current drivability of p-MOS and n-MOS which are balanced in the CMOS (balanced CMOS) on Si(110) surface can also be realized. These devices are very useful for application to analog/digi

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,Vom Controlling zum ?kocontrolling,ng Ge surface cleaning, surface annealing in ammonia, and the effect of nitridation on .—. and leakage current characteristics are presented and discussed. Electrical data obtained by our group for devices incorporating alumina (Al.O.) and hafnia (HfO.) dielectrics is presented and explained. Capaci

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