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Titlebook: Advanced Computer and Communication Engineering Technology; Proceedings of the 1 Hamzah Asyrani Sulaiman,Mohd Azlishah Othman,Naim Confere

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51#
發(fā)表于 2025-3-30 09:35:03 | 只看該作者
52#
發(fā)表于 2025-3-30 14:52:44 | 只看該作者
https://doi.org/10.1007/978-3-642-45612-1ed. The 2?×?2 rectangular microstrip patch array antenna is used in order to characterize channel parameter at 2.4?GHz operating frequency. The system measurement was been conducted in UTeM Microwave Laboratory, according to the real situation in indoor environment.
53#
發(fā)表于 2025-3-30 18:56:15 | 只看該作者
54#
發(fā)表于 2025-3-30 22:35:03 | 只看該作者
,über Gruppen von Transformationen,er is evaluated by using autocorrelation of received signal and signal power is indirectly estimated from pilot power using cross correlation. Simulation results show that proposed method has very less bias and very close to the actual SNR values.
55#
發(fā)表于 2025-3-31 01:51:16 | 只看該作者
56#
發(fā)表于 2025-3-31 06:26:06 | 只看該作者
,Der Verdrehungswinkel von Walzeisentr?gern,sign (TCAD) tools. The I-layer thickness (or width) is varied from 4 to 8?μm in order to investigate its effects on the current-voltage (I–V) characteristics. These structures were design based on CMOS process.
57#
發(fā)表于 2025-3-31 09:12:05 | 只看該作者
58#
發(fā)表于 2025-3-31 16:40:55 | 只看該作者
Conference proceedings 2015applications of electronics, communications, computing and information technology. Experts in research, industry, and academia present the latest developments in technology, describe applications involving cutting-edge communication and computer systems and explore likely future directions. In addit
59#
發(fā)表于 2025-3-31 20:43:06 | 只看該作者
1876-1100 ts.Provides access to numerous new algorithms to help solve This book covers diverse aspects of advanced computer and communication engineering, focusing specifically on industrial and manufacturing theory and applications of electronics, communications, computing and information technology. Experts
60#
發(fā)表于 2025-4-1 01:42:36 | 只看該作者
,A. F?ppl als Forscher und Lehrer,op of the layer through tiny hole created on the SiO. layer. The results of the IV characteristics are compared to the dark current condition which no light will be supply on top of the structure. The result of the electric field and mobility in those two conditions are also observed in this paper.
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