Titlebook: Wissenstransfer in Einsatzorganisationen; Empirische Entwicklu Johannes C. Müller Book 2018 Springer Fachmedien Wiesbaden GmbH, ein Teil vo

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Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simu simulations of the temperature dependence of the electron occupation probability near the anode and the cathode demonstrate a high robustness of the low occupation region. The RESET process in RRAM simulated with our stochastic model is in good agreement with experimental results.

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Bonding Forces978-3-540-38195-2Series ISSN 0081-5993 Series E-ISSN 1616-8550

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