標(biāo)題: Titlebook: Ultraclean Surface Processing of Silicon Wafers; Secrets of VLSI Manu Takeshi Hattori Book 1998 Springer-Verlag Berlin Heidelberg 1998 Tech [打印本頁(yè)] 作者: 祈求 時(shí)間: 2025-3-21 18:50
書目名稱Ultraclean Surface Processing of Silicon Wafers影響因子(影響力)
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書目名稱Ultraclean Surface Processing of Silicon Wafers被引頻次
書目名稱Ultraclean Surface Processing of Silicon Wafers被引頻次學(xué)科排名
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書目名稱Ultraclean Surface Processing of Silicon Wafers讀者反饋
書目名稱Ultraclean Surface Processing of Silicon Wafers讀者反饋學(xué)科排名
作者: 腫塊 時(shí)間: 2025-3-21 23:42
t addresses educators, journalists, politicians, language communities and others. The availability and use of language technology in Europe varies between languages. Consequently, the actions that are required to further support research and development of language technologies also differ for each 作者: kyphoplasty 時(shí)間: 2025-3-22 03:50 作者: orthodox 時(shí)間: 2025-3-22 07:52
Ayako Shimazakiainable approach to global apparel.Advises on a reasonable b.This book discusses the maxim of industrialization with a human face or social upgrading, which currently dominates the academic and actual policy discourses, particularly in late-comer economies of the Global South such as Ethiopia. To un作者: 自愛(ài) 時(shí)間: 2025-3-22 10:18 作者: BRINK 時(shí)間: 2025-3-22 15:51 作者: 冷淡一切 時(shí)間: 2025-3-22 17:04
Measurement of Particles on Wafer Surfacesr strongly in their detection principles. The use of particle detection on the mirror-polished and filmed wafers plays a major role in monitoring particle generation from equipment. For in-line monitoring and yield analysis, the investigation of patterned wafers is efficient.作者: Occipital-Lobe 時(shí)間: 2025-3-22 21:28
Analysis and Evaluation of Impurities on Wafer Surfacescal techniques are used for a macroscopic analysis, and physical techniques enable the analysis of the state of the contamination in the microscopic range. Table 13.1 lists various analytical methods for impurities on the silicon surface.作者: vitrectomy 時(shí)間: 2025-3-23 04:27
Book 1998gh-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.作者: Infantry 時(shí)間: 2025-3-23 05:32 作者: HPA533 時(shí)間: 2025-3-23 09:54
Influence of Silicon Crystal Quality on Device Characteristicsal raw material of the device, has been the object of vigorous research and development. Looking back at the evolution of this research, its goals have progressed from Si crystal growth to the treatment of those crystals, and from there to device processing, with the present emphasis on “cleanliness” and the “change to larger diameter”.作者: 散步 時(shí)間: 2025-3-23 17:09 作者: decode 時(shí)間: 2025-3-23 21:38
Influence of Silicon Crystal Quality on Device Characteristics and the foundation device of the modern LSI was constructed. Transistor development gradually shifted from the use of Ge crystals to Si crystals because, compared with Ge, Si provides the possibility of device operation at much higher temperatures, and promises much more stable operation. Further, 作者: 停止償付 時(shí)間: 2025-3-23 22:21
Influence of Contaminants on Device Characteristicsluence of contamination on the semiconductor device, the present level of cleanliness, and future required levels remain unclear, and knowledge is still not shared between device, equipment, and materials manufacturers.作者: Pantry 時(shí)間: 2025-3-24 05:46
Influence of Metallic Contamination on Dielectric Degradation of MOS Structuresal oxidation, just before gate oxidation, on the gate oxide film, or in the subsequent process steps); on the form of metallic contaminants such as ions, particles, or metal oxide; and on the condition of thermal processes (temperature, time, and ambient) of LSI fabrication. This dependency results 作者: 休戰(zhàn) 時(shí)間: 2025-3-24 07:22 作者: Tremor 時(shí)間: 2025-3-24 13:23 作者: 贊美者 時(shí)間: 2025-3-24 16:15 作者: 赤字 時(shí)間: 2025-3-24 20:31 作者: 競(jìng)選運(yùn)動(dòng) 時(shí)間: 2025-3-25 01:55
Particle Adhesion and Removal on Wafer Surfaces in RCA Cleaning) and the electrostatic force (the reciprocal action of an electrical double layer). Research related to the particle adhesion mechanism on wafer surfaces in solutions that conform to the above two actions has thrived in recent years, and has done much to clarify the particle adhesion mechanism [1–1作者: 新義 時(shí)間: 2025-3-25 04:17
Effects of Electrostatic Charge on Particle Adhesion on Wafer Surfacesthe deposition of airborne particles due to static electricity, device defects due to static discharge, electron beam exposure time, etc., constitute electron orbit damage. These types of electrostatic damage have manifested themselves at extremely high rates accompanying the higher integration of c作者: commonsense 時(shí)間: 2025-3-25 07:45 作者: Exposure 時(shí)間: 2025-3-25 11:59
Analysis and Evaluation of Impurities on Wafer Surfacescon wafers. The impurities are classified as various kinds of organic and inorganic materials [1]. The analysis methods and the aim of the observation differ depending on the contamination and have a wide range of macroscopic or microscopic, chemical or physical techniques. Generally speaking, chemi作者: intellect 時(shí)間: 2025-3-25 19:08 作者: GEN 時(shí)間: 2025-3-25 23:36
Electrical Evaluation of Metallic Impurities on Wafer Surfacesurface photovoltage (SPV) method, is it possible to determine the amount of charge due to heavy metals on the wafer surface. However, when a heat treatment is performed after contamination with heavy metals, the metals diffuse into the bulk, leading to a solid solution forming pairs with doped impur作者: Kidney-Failure 時(shí)間: 2025-3-26 02:05
Book 1998e leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean hi作者: 表臉 時(shí)間: 2025-3-26 05:25 作者: Amorous 時(shí)間: 2025-3-26 09:11
Ultraclean Technology for VLSI Manufacturing: An Overviewll-scale VLSI. The semiconductor contributes significantly not only to the electrical industry but to the development of manufacturing as a whole. It is even referred to as the “staple diet” of industry.作者: 失望昨天 時(shí)間: 2025-3-26 15:35 作者: 顧客 時(shí)間: 2025-3-26 19:40 作者: podiatrist 時(shí)間: 2025-3-26 21:54
978-3-642-08272-6Springer-Verlag Berlin Heidelberg 1998作者: arrogant 時(shí)間: 2025-3-27 02:14 作者: placebo-effect 時(shí)間: 2025-3-27 07:43 作者: growth-factor 時(shí)間: 2025-3-27 09:36
Particle Adhesion and Removal on Wafer Surfaces in RCA Cleaning) and the electrostatic force (the reciprocal action of an electrical double layer). Research related to the particle adhesion mechanism on wafer surfaces in solutions that conform to the above two actions has thrived in recent years, and has done much to clarify the particle adhesion mechanism [1–12].作者: 敏捷 時(shí)間: 2025-3-27 15:15
Effects of Electrostatic Charge on Particle Adhesion on Wafer Surfacesthe deposition of airborne particles due to static electricity, device defects due to static discharge, electron beam exposure time, etc., constitute electron orbit damage. These types of electrostatic damage have manifested themselves at extremely high rates accompanying the higher integration of circuitry.作者: 可商量 時(shí)間: 2025-3-27 18:05 作者: lipids 時(shí)間: 2025-3-27 23:31
https://doi.org/10.1007/978-3-662-03535-1Technologie; VLSI; production; quality; semiconductor devices作者: mortgage 時(shí)間: 2025-3-28 04:46
Particle Deposition in VacuumThe relationship between particles and wafers in a vacuum can be divided into the following three categories, which will be discussed along with countermeasures against particles:作者: Cryptic 時(shí)間: 2025-3-28 09:15 作者: GROG 時(shí)間: 2025-3-28 10:30
Influence of Metallic Contamination on Dielectric Degradation of MOS Structuresever, by using several kinds of intentional contamination experiments, it has been made clear that the mechanisms of dielectric degradation are generally classified into the five categories discussed in Sects. 4.1.1–4.1.5.作者: Intellectual 時(shí)間: 2025-3-28 15:18
Electrical Evaluation of Metallic Impurities on Wafer Surfacesbulk due to heat treatment. Furthermore, methods, principles, and evaluation examples are described for microwave photoconductive decay (.-PCD), SPV, the reverse bias leakage current, MOS C-t, and the evaluation method of gate oxide integrity. The degradation mechanisms of the oxide film caused by m作者: Aboveboard 時(shí)間: 2025-3-28 18:53 作者: NEXUS 時(shí)間: 2025-3-29 02:56
Takeshi Hattorin European climate research into the global context. It is, as such, a must for climate researchers worldwide." (Gaston Demarée, Royal Meteorological Institute of Belgium).."This volume marks a significant step978-94-007-9139-8978-90-481-3167-9作者: 極大的痛苦 時(shí)間: 2025-3-29 06:48 作者: 男生戴手銬 時(shí)間: 2025-3-29 08:33
Ayako ShimazakiIf the government does not consciously respond to the “race to the bottom”, the cold current of economic globalization that dominates the global apparel value chain, local industrial workers in Ethiopian indust978-3-031-60492-8978-3-031-60490-4Series ISSN 2662-2483 Series E-ISSN 2662-2491 作者: 小故事 時(shí)間: 2025-3-29 13:30 作者: Infantry 時(shí)間: 2025-3-29 17:00 作者: 誘騙 時(shí)間: 2025-3-29 20:56 作者: ASSET 時(shí)間: 2025-3-30 02:47 作者: ECG769 時(shí)間: 2025-3-30 05:51 作者: Ingest 時(shí)間: 2025-3-30 08:52
Detection of SOA Patternsich is based on our previous work for the detection of antipatterns. As a first step, we define five SOA patterns extracted from the literature. We specify these patterns using “rule cards”, which are sets of rules that combine various metrics, static or dynamic, using a formal grammar. The second s作者: Working-Memory 時(shí)間: 2025-3-30 13:25 作者: 要素 時(shí)間: 2025-3-30 18:03
2191-544X iques through movie reviews, twitter data and social networkMovies will never be the same after you learn how to analyze?movie data, including?key data mining, text mining and social network analytics concepts. These techniques may then be used in endless other contexts. In the movie application, th作者: ABASH 時(shí)間: 2025-3-30 22:50
Lecture Notes in Computer Sciencehttp://image.papertrans.cn/b/image/180003.jpg作者: Disk199 時(shí)間: 2025-3-31 04:40
