派博傳思國際中心

標題: Titlebook: Ultra-Fast Silicon Bipolar Technology; Ludwig Treitinger,Mitiko Miura-Mattausch Textbook 1988 Springer-Verlag Berlin Heidelberg 1988 VLSI. [打印本頁]

作者: minuscule    時間: 2025-3-21 16:29
書目名稱Ultra-Fast Silicon Bipolar Technology影響因子(影響力)




書目名稱Ultra-Fast Silicon Bipolar Technology影響因子(影響力)學科排名




書目名稱Ultra-Fast Silicon Bipolar Technology網(wǎng)絡公開度




書目名稱Ultra-Fast Silicon Bipolar Technology網(wǎng)絡公開度學科排名




書目名稱Ultra-Fast Silicon Bipolar Technology被引頻次




書目名稱Ultra-Fast Silicon Bipolar Technology被引頻次學科排名




書目名稱Ultra-Fast Silicon Bipolar Technology年度引用




書目名稱Ultra-Fast Silicon Bipolar Technology年度引用學科排名




書目名稱Ultra-Fast Silicon Bipolar Technology讀者反饋




書目名稱Ultra-Fast Silicon Bipolar Technology讀者反饋學科排名





作者: Mingle    時間: 2025-3-21 21:40

作者: BRIBE    時間: 2025-3-22 01:04
978-3-642-74362-7Springer-Verlag Berlin Heidelberg 1988
作者: 類型    時間: 2025-3-22 08:05
Ultra-Fast Silicon Bipolar Technology978-3-642-74360-3Series ISSN 0172-5734
作者: 反話    時間: 2025-3-22 09:23
History, Present Trends, and Scaling of Silicon Bipolar Technology, Physics for their epochal invention. Since then, bipolar transistors have been widely used for many purposes. Applications can be divided into two broad categories: amplification and switching. As an amplifier more than a factor of 100 in amplification is available and a switching speed in the sub-ns range can be obtained.
作者: 定點    時間: 2025-3-22 15:04
Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors,e of polycrystalline silicon (poly-Si) as diffusion source and contact material for the emitter. Besides facilitating the second important achievement, self-alignment between emitter and base contact, the poly-Si emitter has the following major advantages:
作者: 制度    時間: 2025-3-22 19:43
Advanced Self-Alignment Technologies and Resulting Structures of High-Speed Bipolar transistors, high-speed circuits are constructed and their excellent performance is nearly equal to that of GaAs devices. Other high-speed transistor structures are demonstrated, and sub- 50ps ECL circuits are predicted.
作者: 預防注射    時間: 2025-3-23 00:23

作者: Asperity    時間: 2025-3-23 04:37

作者: 單挑    時間: 2025-3-23 07:26
Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors,a self-aligned bipolar transistor. The new technology, BSA (BSG Self-Aligned) technology, features the use of BSG film as a sidewall spacer between the emitter and base electrodes as well as the diffusion source for the intrinsic base and also for the p.-link region between the intrinsic and extrins
作者: Hyperplasia    時間: 2025-3-23 11:15

作者: 保全    時間: 2025-3-23 17:32
Trench Isolation Schemes for Bipolar Devices: Benefits and Limiting Aspects,lation techniques have realized not only a high packing density but also reduced collector-substrate, wiring-substrate and base- collector parasitic capacitances. By using these techniques, high performance bipolar devices such as ultra-high-speed ECL RAMs, gate arrays and microprocessors have been
作者: 易于交談    時間: 2025-3-23 21:31
A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI, high performance prescaler IC and high-gate-density master- slice LSI. The main feature of this process, for reduction of both the base resistance and the capacitance, is the silicidation of the base contact which is opened by employing self-alignment technology. A 1/128, 1/129 two-modulus prescale
作者: 流出    時間: 2025-3-23 22:50
Advanced Self-Alignment Technologies and Resulting Structures of High-Speed Bipolar transistors,echnology. High cutoff frequencies of 14 GHz in the downward-mode and 4 GHz in the upward-mode operations have been obtained. Using these transistors, high-speed circuits are constructed and their excellent performance is nearly equal to that of GaAs devices. Other high-speed transistor structures a
作者: Entirety    時間: 2025-3-24 02:25

作者: Heresy    時間: 2025-3-24 09:02

作者: 黃油沒有    時間: 2025-3-24 12:33

作者: negotiable    時間: 2025-3-24 15:04
Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors,ic base. BSA technology has been successfully combined with the RTA (Rapid Thermal Annealing) technique to fabricate sub-100nm base self-aligned bipolar transistors. The typical BSA transistor has h. = 70, BV. = 7 V and BV. = 3 V. BSA technology is likely to prove extremely useful in future bipolar VLSIs.
作者: committed    時間: 2025-3-24 20:38

作者: MOAT    時間: 2025-3-24 23:52
A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI,r IC comprised of 1.5 μm SCOT transistors has been improved to a high operation of 2.1 GHz at 56 mW power dissipation. An ECL 18K-gate masterslice has been developed by a Variable Size Cell (VSC) approach, employing the SCOT process.
作者: Fulminate    時間: 2025-3-25 03:51

作者: 招募    時間: 2025-3-25 09:04
mmer, in record time, the standard won ratification as an ANSI standard as well. This completed over six years of intensive cooperative effort by a diverse group of people who share a vision on solving some of the severe testing problems that exist now and are steadily getting worse. Early in this p
作者: 充滿人    時間: 2025-3-25 13:55
L. Treitinger,M. Miura-Mattausch (IC) level that allow software to alleviate thegrowing cost of designing, producing and testing digital systems. Afundamental benefit of the standard is its ability to transformextremely difficult printed circuit board testing problems that couldonly be attacked with ad-hoc testing methods into wel
作者: 連系    時間: 2025-3-25 18:52
Masahiko Nakamaeew IEEE 1149.8.1 subsidiary standard and applications.DescriAimed at electronics industry professionals, this 4th edition of the Boundary Scan?Handbook describes recent changes to the IEEE1149.1 Standard Test Access Port and?Boundary-Scan Architecture. This updated edition features new chapters on t
作者: 盤旋    時間: 2025-3-25 22:23
T. F. Meister,H. Schaber,K. Ehinger,J. Bieger,B. Benna,I. Maier (IC) level that allow software to alleviate thegrowing cost of designing and producing digital systems. The primarybenefit of the standard is its ability to transform extremely printedcircuit board testing problems that could only be attacked with ad-hoctesting methods into well-structured problems
作者: Ingest    時間: 2025-3-26 00:45
Hiroshi Goto,Katsuyuki Inayoshithis time is to quickly distribute these ideas to the research community for further study. The book is based on a doctoral dissertation undertaken at MIT between 1982 and 1985. In 1982 the author joined a research group that was applying bounding techniques to simple VLSI timing analysis models. Th
作者: expunge    時間: 2025-3-26 06:40

作者: 使聲音降低    時間: 2025-3-26 08:48
Tohru Nakamura,Kazuo Nakazato,Katsuyoshi Washio,Youich Tamaki,Mitsuo Nambaw the names of colours or the name of the thing he complained about, the jigsaw rainbow, which is part of every programme in the Rainbow series. He did not know what a real rainbow looks like. Still, and usually silent, he continued to watch what he was Ted up of. How much other television he was fe
作者: delusion    時間: 2025-3-26 14:01
M. Ghannam,J. Nijs,R. Mertenslture of sensibility inculcated the ‘Man of Feeling’, characterised by his benevolence and feminine sensibility. But in the figure of Sterne’s Uncle Toby Shandy, this sentimentalism is conflated with the hobby-horsical comedy of Cervantes’s knight-errant, Don Quixote. Secondly, Rousseau’s autobiogra
作者: 發(fā)酵    時間: 2025-3-26 18:37

作者: ECG769    時間: 2025-3-26 23:38

作者: 橡子    時間: 2025-3-27 02:01

作者: encyclopedia    時間: 2025-3-27 06:52
Textbook 1988ge of up-to- is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten- tial for future progress still existing in this field. This progress is char- acterized by the drive towards higher speed and lower power con- sum
作者: 腫塊    時間: 2025-3-27 12:20
Hiroshi Goto,Katsuyuki Inayoshiick LaMaire. The author would like to give special thanks to his wife, Deborra, for her support and many contributions to the presentation of this research. The978-1-4684-9893-6978-1-4684-9891-2Series ISSN 0893-3405
作者: synovitis    時間: 2025-3-27 15:57

作者: LAPSE    時間: 2025-3-27 20:20

作者: Mucosa    時間: 2025-3-28 01:41

作者: Generalize    時間: 2025-3-28 03:56
Masahiko Nakamaeting.IEEE Std 1149.1-2013 ? ? ? ? ? ? The 2013 Revision of 114.9.1.IEEE Std 1532 ? ? ? ? ? ? ? ? ? ?In-System ConfigurationIEEE Std 1149.6-2015 ? ? ? ? ? ? The 2015 Revision of 1149.6 .978-3-319-33069-3978-3-319-01174-5
作者: 抱怨    時間: 2025-3-28 07:36

作者: rectum    時間: 2025-3-28 11:45
se profiles for the anti-proliferative effects of DAME and deltorphin are similar in CD1 and C57BL/6 mice, whereas the profiles are distinctively different for DPDP-E. The effects of DPDP-E appear to be mediated through a δ-like opiate receptor.
作者: Psa617    時間: 2025-3-28 18:10

作者: ingrate    時間: 2025-3-28 22:08

作者: IRK    時間: 2025-3-28 23:26





歡迎光臨 派博傳思國際中心 (http://pjsxioz.cn/) Powered by Discuz! X3.5
慈利县| 安西县| 大邑县| 新郑市| 福贡县| 宜都市| 石家庄市| 阳江市| 扬中市| 夹江县| 望奎县| 同德县| 平度市| 龙胜| 绵阳市| 湘阴县| 盖州市| 灵台县| 沁阳市| 巫山县| 读书| 丰城市| 都兰县| 湖口县| 措美县| 阿拉善左旗| 玛曲县| 敦化市| 神农架林区| 中方县| 望江县| 浦北县| 庄浪县| 青铜峡市| 疏附县| 阜平县| 上栗县| 六枝特区| 囊谦县| 青川县| 新津县|