標題: Titlebook: UV Solid-State Light Emitters and Detectors; Michael S. Shur,Artūras ?ukauskas Conference proceedings 2004 Springer Science+Business Media [打印本頁] 作者: digestive-tract 時間: 2025-3-21 19:42
書目名稱UV Solid-State Light Emitters and Detectors影響因子(影響力)
書目名稱UV Solid-State Light Emitters and Detectors影響因子(影響力)學科排名
書目名稱UV Solid-State Light Emitters and Detectors網(wǎng)絡公開度
書目名稱UV Solid-State Light Emitters and Detectors網(wǎng)絡公開度學科排名
書目名稱UV Solid-State Light Emitters and Detectors被引頻次
書目名稱UV Solid-State Light Emitters and Detectors被引頻次學科排名
書目名稱UV Solid-State Light Emitters and Detectors年度引用
書目名稱UV Solid-State Light Emitters and Detectors年度引用學科排名
書目名稱UV Solid-State Light Emitters and Detectors讀者反饋
書目名稱UV Solid-State Light Emitters and Detectors讀者反饋學科排名
作者: 強制令 時間: 2025-3-21 20:38 作者: Abrupt 時間: 2025-3-22 01:00 作者: CUR 時間: 2025-3-22 05:31 作者: 障礙 時間: 2025-3-22 11:02 作者: 松緊帶 時間: 2025-3-22 14:15
UV Metal Semiconductor Metal Detectors,lications require that UV detectors have a huge dynamic response between UV and the visible, and a very low dark current in the range of the UV flux measured. (Al,Ga)N alloys present a large direct bandgap in this range and therefore can be used as an active region in such detectors. To take advanta作者: 白楊魚 時間: 2025-3-22 20:57
Characterization of Advanced Materials for Optoelectronics by Using UV Lasers and Four-Wave Mixing ructures are presented. Carrier plasma parameters, such as carrier lifetimes and bipolar/monopolar diffusion coefficients as well as surface recombination velocities in heterostructures of GaN/sapphire, InGaN/GaN, CdTe/GaAs, ZnTe homoepitaxial structures, and heavily doped .-GaAs double heterostruct作者: Cloudburst 時間: 2025-3-22 21:20
Quantum Phospors,es environmental problems and causes an undesired delay in lamp startup. If mercury is replaced by xenon, which is already gaseous at room temperature and harmless to the environment, both problems are solved. Xenon however emits at higher energy (.. = 172 nm) and the phosphors used in mercurybased 作者: Chipmunk 時間: 2025-3-23 03:12 作者: 傻 時間: 2025-3-23 06:05
Novel Algan Heterostructures for UV Sensors and Leds,row-band UV sensors. Epitaxial heterostructures of n-type A1N on p-type diamond were grown by MBE and exhibit surprisingly good electronic properties, suggesting a possible application for future UV light-emitting diodes. Finally, the use of AlGaN/GaN heterostructures for biosensors is briefly discu作者: Aids209 時間: 2025-3-23 12:04 作者: Encephalitis 時間: 2025-3-23 13:59
Promising Results of Plasma Assisted MBE for Optoelectronic Applications,ions. However, several results suggest that PAMBE can grow high quality heterostructures on GaN templates and even directly on sapphire substrates. High quality N-face material can be probably grown on sapphire only by PAMBE. N-face GaN is grown after sapphire nitridation at low temperature and a la作者: 洞察力 時間: 2025-3-23 20:42
Low Dislocations Density GaN/Sapphire for Optoelectronic Devices,d devices (LDs and UV-LEDs). GaN/sapphire layers have been grown by Metal Organic Vapor Phase Epitaxy (MOVPE). An amorphous silicon nitride layer is deposited using a SiH./NH. mixture prior to the growth of the low temperature GaN buffer layer. Such a process induces a 3D nucleation at the early beg作者: 違法事實 時間: 2025-3-24 00:54 作者: Commonwealth 時間: 2025-3-24 06:03
Materials Characterization of Group-III Nitrides under High-Power Photoexcitation,n recombination dynamics of degenerated electron—hole plasma is discussed. GaN epilayer quality characterization method based on luminescence transient studies under deep-trap saturation regime is demonstrated. Advances of application of high-density excitation for characterization of InGaN/GaN mult作者: 有害處 時間: 2025-3-24 08:31
Small Internal Electric Fields in Quaternary InAlGaN Heterostructures, sets of structures with different quantum well width and different Al content in the barriers (series A with 30% of Al in the barriers and series B with 60% of Al in the barriers). To determine the magnitude of the built-in electric field we employed several methods: i) theoretical estimation of pi作者: surrogate 時間: 2025-3-24 12:20 作者: 額外的事 時間: 2025-3-24 18:23
Gallium Nitride Schottky Barriers and MSM UV Detectors,perature-stable Schottky barrier contacts to GaN and AlGaN epitaxial layers was elaborated. Electrical parameters of the Schottky barriers were evaluated in a range of temperatures up to 260 °C. The Schottky barrier height, calculated from . measurements was 0.72 eV; the ideality factor value was 1.作者: 亂砍 時間: 2025-3-24 22:44 作者: indigenous 時間: 2025-3-24 23:25
Conference proceedings 2004state lighting has invigorated interest in white light LEDs. Ultraviolet LEDs and solar blind photodetectors represent the next frontier in solid state emitters and hold promise for many important applications in biology, medi- cine, dentistry, solid state lighting, displays, dense data storage, and作者: ineluctable 時間: 2025-3-25 06:54 作者: 厭煩 時間: 2025-3-25 07:35
Promising Results of Plasma Assisted MBE for Optoelectronic Applications,loys, such as quaternary InAlGaN alloy thin films and quantum well heterostructures, have also been grown by PAMBE with good control of the In incorporation. The layers exhibited strong PL up to room temperature and lasing under optical pumping.作者: Rustproof 時間: 2025-3-25 12:09
Stimulated Emission and Gain in GaN Epilayers Grown on Si,ifetime resulting in difference in excited volume of the epitaxial layers. The net-gain spectra exhibited lower optical losses in structures containing the interlayer, apparently due to an improved waveguide structure.作者: Insul島 時間: 2025-3-25 17:28 作者: 很像弓] 時間: 2025-3-25 20:47
Basic Device Issues in UV Solid-State Emitters and Detectors,de heterostructures with a high aluminum molar fraction are becoming more formidable. The solutions to device problems lie in using better substrates (with bulk AlN substrates in non-polar orientations being especially promising), using better epitaxial growth techniques, improving device design and using better contact technology and design.作者: fibroblast 時間: 2025-3-26 03:46 作者: Iatrogenic 時間: 2025-3-26 07:13
Small Internal Electric Fields in Quaternary InAlGaN Heterostructures,series of samples. On the contrary, from the experimental results, we concluded that the built-in electric field is negligible in the samples of series A and is rather weak in those of series B. Possible reasons for the controversies between theory and experiment are suggested.作者: Cholesterol 時間: 2025-3-26 10:42 作者: 有組織 時間: 2025-3-26 15:35 作者: 秘傳 時間: 2025-3-26 20:51 作者: 美學 時間: 2025-3-26 23:04 作者: FRONT 時間: 2025-3-27 03:36 作者: Wallow 時間: 2025-3-27 08:48
Materials Characterization of Group-III Nitrides under High-Power Photoexcitation,t studies under deep-trap saturation regime is demonstrated. Advances of application of high-density excitation for characterization of InGaN/GaN multiple quantum wells under screened built-in electric field are shown.作者: olfction 時間: 2025-3-27 12:30 作者: 面包屑 時間: 2025-3-27 17:14
J.-L. Reverchon,M. Mosca,N. Grandjean,F. Omnes,F. Semond,J.-Y. Duboz,L. Hirschome ways. But the sectoral and spatial distribution of capital has an importance of its own; and we are sometimes led to wrong conclusions when we meditate too long on capital in time to the exclusion of capital in space. But we shall come to that later.作者: 盟軍 時間: 2025-3-27 18:22
K. Jara?iūnasegative exponents . and . When we have this description in mind, we write .[[.]] for .[.], and we refer to it as the . Usually, we shall be in a situation where . is commutative, and we note that then .[[.]] is actually an .-algebra, in the sense used before with a field in the role of 作者: MERIT 時間: 2025-3-28 00:57
A. P. Vink,E. Van Der Kolk,P. Dorenbos,C. W. E. Van Eijkcreases in the emission current, respectively. Energy spectra of electrons from a clean pentagon and through an adsorbed molecule are measured individually. For a clean surface a subpeak is observed at about 0.5 eV lower than the main peak, while the subpeak disappeared for the adsorbed surface.作者: 空中 時間: 2025-3-28 02:26
A. ?ukauskas,M. S. Shur,R. Gaskaecreases in the emission current, respectively. Energy spectra of electrons from a clean pentagon and through an adsorbed molecule are measured individually. For a clean surface a subpeak is observed at about 0.5 eV lower than the main peak, while the subpeak disappeared for the adsorbed surface.作者: malign 時間: 2025-3-28 07:01
M. Stutzmannreactions. Special attention has been paid to enantioselective hydrosilylation of olefins, which has been experiencing a renaissance in recent years and is an extremely attractive method in the synthesis of chiral silanes, alcohols, and their derivatives.作者: Anthem 時間: 2025-3-28 10:34
E. Mu?oz,J. L. Pau,C. Riveradvanced utilization of new information technology. The fields and issues that are analyzed in this book have not been discussed in the same context in the current scientific literature, although they are becoming more important in information systems development. This book includes both theoreti- cal foundati978-1-4612-7153-6978-1-4612-1464-9作者: COUCH 時間: 2025-3-28 17:37 作者: 全神貫注于 時間: 2025-3-28 19:05
S. Anceau,S. P. ?epkowski,H. Teisseyre,T. Suski,P. Perlin,P. Lefebvre,L. Kończewicz,H. Hirayama,Y. Af going to Albania. For a variety of reasons Albania has retained its reputation for being mysterious, unknown and unapproachable, even though the global village has shrunk, and formerly remote parts of the world like Australia and California have become all too familiar.作者: 他姓手中拿著 時間: 2025-3-29 02:30
ation isomers, including molecules whose geometric features are changing with time. Accordingly, there is definitely a need for new types of ideas, concepts, th978-3-540-13391-9978-3-642-93266-3Series ISSN 0342-4901 Series E-ISSN 2192-6603 作者: 禁止,切斷 時間: 2025-3-29 05:24 作者: 首創(chuàng)精神 時間: 2025-3-29 10:43
1568-2609 nductor materials and in improved light extraction techniques led to the development of a new generation of efficient and pow- erful visible high-brightness LED978-1-4020-2035-3978-1-4020-2103-9Series ISSN 1568-2609 作者: Emasculate 時間: 2025-3-29 13:31
M. S. Shur,A. ?ukauskassnational higher education.? Delivery models.? Transcultural learning.? Critical pedagogy for transnational education and learning.? Transcultural consciousness in transnational education.? Inter-institutional/978-94-6300-420-6作者: indifferent 時間: 2025-3-29 19:07 作者: Condescending 時間: 2025-3-29 21:30 作者: 裙帶關系 時間: 2025-3-30 02:54 作者: 改革運動 時間: 2025-3-30 07:04 作者: Debility 時間: 2025-3-30 11:18
A. S. Usikov,Yu. Melnik,A. I. Pechnikov,V. A. Soukhoveev,O. V. Kovalenkov,E. Shapovalova,S. Yu. Karpur data with concurrent use of genetic models of integrin deficiency reveal nonredundant functions of α4 integrins in lymphocyte migration to the peritoneum and further refine specific roles of α4 and β2 integrins concerning trafficking and clearance of other leukocyte subsets at homeostasis and during inflammation.作者: 狂熱語言 時間: 2025-3-30 12:47
E. Kuokstis,G. Tamulaitis,M. Asif Khanl tools for learning more about the internal quark configurations of hadrons in future experiments. The subject has the potential for strong scientific complementarity and progress in exploring hadron physics at Brookhaven, SLAC and CEBAF as well as future facilities.作者: 詳細目錄 時間: 2025-3-30 16:38 作者: 向外才掩飾 時間: 2025-3-30 22:16
R. Gaska,M. Asif Khan,M. S. Shur layer. We discuss here an attempt to quantify the transport of CO. within a leaf, the kinetics of chloroplast enzymes, and the interaction of transport and kinetics, which may, in part, regulate the rate of photosynthesis.作者: strdulate 時間: 2025-3-31 01:37 作者: 組裝 時間: 2025-3-31 05:13 作者: defibrillator 時間: 2025-3-31 12:50 作者: Bouquet 時間: 2025-3-31 15:49
UV Metal Semiconductor Metal Detectors,selectivity between UV and visible reaches five orders of magnitude. A geometry of inter-digitized fingers is optimized in regards to the peak response. The Schottky barrier and a dielectric passivation result in dark currents lower than 1 fA up to 30 V for a 100 x 100 μm. pixel. Consequently, detec作者: 白楊魚 時間: 2025-3-31 18:07 作者: 以煙熏消毒 時間: 2025-4-1 01:42 作者: albuminuria 時間: 2025-4-1 05:13 作者: Subjugate 時間: 2025-4-1 06:45 作者: defendant 時間: 2025-4-1 13:14
Optical Measurements Using Light-Emitting Diodes,sources of light, fluorometry including fluorescence lifetime measurements, and spectroscopic applications (photoluminescence line shape, absorption and absorption correlation, surface-plasmon resonance, photoreflection, and Ra-man measurements).作者: 木訥 時間: 2025-4-1 17:19
Novel Algan Heterostructures for UV Sensors and Leds,row-band UV sensors. Epitaxial heterostructures of n-type A1N on p-type diamond were grown by MBE and exhibit surprisingly good electronic properties, suggesting a possible application for future UV light-emitting diodes. Finally, the use of AlGaN/GaN heterostructures for biosensors is briefly discussed.作者: 分散 時間: 2025-4-1 19:24
978-1-4020-2035-3Springer Science+Business Media Dordrecht 2004
