標(biāo)題: Titlebook: Subsecond Annealing of Advanced Materials; Annealing by Lasers, Wolfgang Skorupa,Heidemarie Schmidt Book 2014 Springer International Publis [打印本頁(yè)] 作者: 稀少 時(shí)間: 2025-3-21 19:57
書(shū)目名稱Subsecond Annealing of Advanced Materials影響因子(影響力)
書(shū)目名稱Subsecond Annealing of Advanced Materials影響因子(影響力)學(xué)科排名
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書(shū)目名稱Subsecond Annealing of Advanced Materials被引頻次
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書(shū)目名稱Subsecond Annealing of Advanced Materials讀者反饋
書(shū)目名稱Subsecond Annealing of Advanced Materials讀者反饋學(xué)科排名
作者: BILE 時(shí)間: 2025-3-21 23:40
Danilo Bürger,Shengqiang Zhou,Marcel H?wler,Xin Ou,Gy?rgy J. Kovacs,Helfried Reuther,Arndt Mücklich,作者: 向外才掩飾 時(shí)間: 2025-3-22 01:35 作者: 樂(lè)器演奏者 時(shí)間: 2025-3-22 06:26 作者: Microgram 時(shí)間: 2025-3-22 12:00 作者: podiatrist 時(shí)間: 2025-3-22 15:49 作者: photopsia 時(shí)間: 2025-3-22 17:08
Superconducting Gallium Implanted Germanium,and at the same time to avoid dopant clustering. In strong contrast to all other doping techniques, ion implantation is not limited to the equilibrium solid solubility of the dopants in the host material. Furthermore, it is widely used in nowadays microelectronics technology which makes this process作者: 交響樂(lè) 時(shí)間: 2025-3-22 23:52
Structural Changes in SiGe/Si Layers Induced by Fast Crystallization,: Segregation of Ge to nanometer-scale cellular network and islands: effect of SiGe composition and crystallization velocity; Morphology and atomic structure of swift heavy ion-induced discontinuous tracks in SiGe alloy layers as a result of fast segregation; Pulsed laser modification of Ge and GeSn作者: 淡紫色花 時(shí)間: 2025-3-23 03:23
Sub-nanosecond Thermal Spike Induced Nanostructuring of Thin Solid Films Under Swift Heavy Ion (SHIation of a-Si/c-Si nanostructures in a silicon nitride matrix..(i) Metal nanoparticles embedded in a thin film matrix belong to a class of materials that has potential applications as optical and magnetic sensors, storage, memory devices, field emission display etc. The nanoparticle size and shape, 作者: Scintillations 時(shí)間: 2025-3-23 05:54 作者: 結(jié)合 時(shí)間: 2025-3-23 12:17 作者: Brittle 時(shí)間: 2025-3-23 16:37
,Formation of High-Quality μm-Order-Thick Poly-Si Films on Glass-Substrates by Flash Lamp Annealing, and partial liquid-phase epitaxy (LPE), resulting in the formation of grains with sizes of 10–500?nm. This rapid lateral crystallization leads to the complete preservation of abrupt dopant profiles, which is favorable for device fabrication. This particular crystallization also results in the suppr作者: DUCE 時(shí)間: 2025-3-23 21:16
Millisecond-Range Liquid-Phase Processing of Silicon-Based Hetero-nanostructures, techniques (Prucnal et?al. in Nano Lett. 11:2814, .). The FLA appears to be the most suitable one for this purpose. The energy budget introduced to the sample during FLA is sufficient to recrystallize silicon amorphized during implantation and to form III–V nanocrystals (NCs). In this paper we will作者: NOT 時(shí)間: 2025-3-24 02:05
Millisecond Annealing for Semiconductor Device Applications, continues, the need to limit atomic diffusion and defect formation calls for ever-decreasing thermal budget, opening up new opportunities for MSA. Furthermore, the processing has to be compatible with new materials, including high-K dielectrics and metal gates, as well as the features needed for st作者: dowagers-hump 時(shí)間: 2025-3-24 03:40
Low-Cost and Large-Area Electronics, Roll-to-Roll Processing and Beyond,verall size defines the ultimate performance (Sun and Rogers in Adv. Mater. 19:1897–1916, .). The major challenges of large-scale production are discussed. Particular attention has been focused on describing advanced, short-term heat treatment approaches, which offer a range of advantages compared t作者: 潰爛 時(shí)間: 2025-3-24 07:05 作者: ANA 時(shí)間: 2025-3-24 14:09 作者: ARK 時(shí)間: 2025-3-24 18:14
Peter Oesterlinistungen - Anwendungsbereiche der HOAI: von der Projektsteuerung bis zu vermessungstechnischen Leistungen, von der Bauplanung bis zur Abnahme - Berechnungsbeispiele innerhalb und au?erhalb der HOAI-Tafelwerte - Kommentierte Prüfungsfragen für die Entwicklung spezifischer eigener Prüfungen?Für den Auftragsgebe978-3-503-20973-6Series ISSN 1867-2884 作者: ingrate 時(shí)間: 2025-3-24 21:11
Keisuke Ohdairaject level. Finally, through Labelled Deductive Systems, we use the context of the revision to finetune its operation and illustrate the idea through the presentation of various algorithms.The book is suitable for researchers and postgraduates in the areas of artificial intelligence, database theory作者: 谷類 時(shí)間: 2025-3-25 01:04 作者: 態(tài)學(xué) 時(shí)間: 2025-3-25 05:26
P. J. Timans,G. Xing,J. Cibere,S. Hamm,S. McCoy and management options for the aforementioned complications, including preoperative evaluation prior to revision and surgical techniques for revision, specifically conversion to Roux-en-Y gastric bypass (RYGB), re-sleeve gastrectomy (Re-SG), and biliopancreatic diversion with duodenal switch (BPD-D作者: 圓柱 時(shí)間: 2025-3-25 09:47 作者: 不開(kāi)心 時(shí)間: 2025-3-25 13:30 作者: Brain-Imaging 時(shí)間: 2025-3-25 16:36 作者: blackout 時(shí)間: 2025-3-25 22:56 作者: 撫育 時(shí)間: 2025-3-26 03:59 作者: Incommensurate 時(shí)間: 2025-3-26 06:54 作者: 浪費(fèi)物質(zhì) 時(shí)間: 2025-3-26 11:19
S. Prucnal,W. Skorupae, database theory, and logic The authors illustrate the ideAn important aspect in the formalisation of common-sense reasoning is the construction of a model of what an agent believes the world to be like to help in her reasoning process. This model is often incomplete or inaccurate, but new informa作者: Vo2-Max 時(shí)間: 2025-3-26 15:04 作者: 威脅你 時(shí)間: 2025-3-26 19:18
P. J. Timans,G. Xing,J. Cibere,S. Hamm,S. McCoyrmonal changes as a means of treating morbid obesity. Despite widespread use, the procedure is not without its complications, including gastric leaks from the staple line, strictures and stenoses, gastroesophageal reflux, insufficient weight loss, and progressive weight regain. Many of these complic作者: Vsd168 時(shí)間: 2025-3-26 22:04 作者: 遠(yuǎn)地點(diǎn) 時(shí)間: 2025-3-27 02:32
Shengqiang Zhou,Danilo Bürger,Heidemarie Schmidtasingly popular, especially with the development of the laparoscopic approach. Anti-reflux surgery and paraesophageal hernia repair require technical expertise. These operations have a known failure rate over time, and many patients will go on to require a subsequent intervention. Patients with deve作者: 無(wú)能的人 時(shí)間: 2025-3-27 07:39
uiring reoperation..Written by experts in the field.This book is divided into 3 parts, each containing chapters that cover commonly encountered clinical scenarios of reoperative surgery. These parts include revisional bariatric surgery, reoperation for complications of bariatric surgery, and revisio作者: 形上升才刺激 時(shí)間: 2025-3-27 10:12 作者: 斗爭(zhēng) 時(shí)間: 2025-3-27 15:29 作者: VAN 時(shí)間: 2025-3-27 18:41 作者: 俗艷 時(shí)間: 2025-3-27 22:04 作者: 孵卵器 時(shí)間: 2025-3-28 04:21 作者: 危險(xiǎn) 時(shí)間: 2025-3-28 07:18
Nanonet Formation by Constitutional Supercooling of Pulsed Laser Annealed, Mn-Implanted Germanium,n of a semiconductor or a metal. If the energy density is high enough, the system may melt near the surface. Because of the large temperature gradient, a very fast recrystallization may lead to novel physical material properties. Here we present interesting aspects of the formation of a Mn-rich nano作者: 公社 時(shí)間: 2025-3-28 12:31 作者: 救護(hù)車(chē) 時(shí)間: 2025-3-28 15:58
Superconducting Gallium Implanted Germanium,hnologies like spintronics or quantum computing. Similar to ferromagnetism in diluted magnetic semiconductors it is even possible to achieve a superconducting state in heavily doped elemental semiconductors. Superconductivity in doped semiconductors is of increasing interest for both, fundamental re作者: JEER 時(shí)間: 2025-3-28 19:54 作者: Osteons 時(shí)間: 2025-3-29 00:56 作者: 魅力 時(shí)間: 2025-3-29 03:44
Pulsed-Laser-Induced Epitaxial Growth of Silicon for Three-Dimensional Integrated Circuits,FETs on the seeding crystalline Si wafer is not thermally damaged, the PLEG is promising for monolithic 3D integration of circuits. This paper will review our systematic studies of both simulation and experiment on the PLEG of Si aimed for fundamental understanding of the epitaxial growth and reduct作者: aspersion 時(shí)間: 2025-3-29 09:16
Improvement of Performance and Cost of Functional Films Using Large Area Laser RTP,sing (RTP) is an alternative way to fulfill the cost and performance goals of the 2nd and 3rd generation of photovoltaic products and other types of thin film electronics as well. A?variety of efficient and reliable laser sources are available from UV to IR that can match the absorption characterist作者: 很像弓] 時(shí)間: 2025-3-29 11:29
Pulsed Laser Dopant Activation for Semiconductors and Solar Cells,ature activation processes. This reduction was realized by decreasing process duration, coupled with strongly enhanced wafer heating and cooling ramps. Standard lamp technology finally achieved processes as short as a few seconds only with ramps of up to 300?K/s..The next technology step was achieve作者: 流動(dòng)性 時(shí)間: 2025-3-29 19:11
,Formation of High-Quality μm-Order-Thick Poly-Si Films on Glass-Substrates by Flash Lamp Annealing,cursor amorphous Si (a-Si) films prepared on low-cost substrates without serious thermal damage onto the whole glass substrates, thanks to its proper annealing duration. The FLA of a-Si films can induce lateral explosive crystallization (EC), self-catalytic crystallization driven by the release of l作者: Ondines-curse 時(shí)間: 2025-3-29 20:56
Millisecond-Range Liquid-Phase Processing of Silicon-Based Hetero-nanostructures,MOS devices below 16?nm will need to solve some of the practical limits caused by one of the integration issues, such as chip performance, cost of development and production, power dissipation, reliability, etc. One solution for the performance progress which can overcome the downsizing limit in sil作者: CULP 時(shí)間: 2025-3-30 01:24
,Radiation Thermometry—Sources of Uncertainty During Contactless Temperature Measurement,r commercial availability, short response time, easy handling and contactless operation. However, they hold a source for considerable measurement errors. False readings are easily gained producing large errors during temperature measurement..This chapter intends to give the reader an overview on cha作者: seruting 時(shí)間: 2025-3-30 07:46
Millisecond Annealing for Semiconductor Device Applications,tary metal-oxide-semiconductor (CMOS) devices. MSA provides several unique process capabilities that have been very helpful for continued scaling of CMOS. One early application was for improving carrier activation in polysilicon gate electrodes, which reduces carrier depletion effects, providing inc作者: 殺死 時(shí)間: 2025-3-30 12:09 作者: Grandstand 時(shí)間: 2025-3-30 16:23
Application of Sub-second Annealing for Diluted Ferromagnetic Semiconductors,ge and spin. Mn ions which substitute Ga sublattice sites provide both local magnetic moments and itinerant holes. The magnetic properties of GaMnAs can be controlled by manipulating free carriers via electrical gating. However, the preparation of ferromagnetic GaMnAs presents a big challenge due to作者: goodwill 時(shí)間: 2025-3-30 19:52 作者: myelography 時(shí)間: 2025-3-30 21:30
Subsecond Annealing of Advanced Materials978-3-319-03131-6Series ISSN 0933-033X Series E-ISSN 2196-2812 作者: constitute 時(shí)間: 2025-3-31 02:03
Historical Aspects of Subsecond Thermal Processing,From atom bomb simulation to advanced semiconductor processing—what a bellicose-to-peaceful bottom-up approach this research field experienced.作者: malign 時(shí)間: 2025-3-31 06:19
