標(biāo)題: Titlebook: Springer Handbook of Crystal Growth; Govindhan Dhanaraj,Kullaiah Byrappa,Michael Dudley Book 2010 Springer-Verlag Berlin Heidelberg 2010 T [打印本頁(yè)] 作者: 摩擦 時(shí)間: 2025-3-21 16:04
書(shū)目名稱Springer Handbook of Crystal Growth影響因子(影響力)
書(shū)目名稱Springer Handbook of Crystal Growth影響因子(影響力)學(xué)科排名
書(shū)目名稱Springer Handbook of Crystal Growth網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱Springer Handbook of Crystal Growth網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱Springer Handbook of Crystal Growth被引頻次
書(shū)目名稱Springer Handbook of Crystal Growth被引頻次學(xué)科排名
書(shū)目名稱Springer Handbook of Crystal Growth年度引用
書(shū)目名稱Springer Handbook of Crystal Growth年度引用學(xué)科排名
書(shū)目名稱Springer Handbook of Crystal Growth讀者反饋
書(shū)目名稱Springer Handbook of Crystal Growth讀者反饋學(xué)科排名
作者: Devastate 時(shí)間: 2025-3-21 22:48 作者: extrovert 時(shí)間: 2025-3-22 03:02
Govindhan Dhanaraj,Kullaiah Byrappa,Michael DudleyProvides the most complete state-of-the-art presentation of the basics and realization of crystal growth.Covers the major developments in crystal growth.Summarizes the most recent knowledge of theory 作者: reflection 時(shí)間: 2025-3-22 07:50 作者: 宇宙你 時(shí)間: 2025-3-22 12:47
Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applicationsapplied Czochralski growth systems and unidirectional solidification systems are the focus for large-scale integrated (LSI) circuits and solar applications, for which control of melt flow is a key issue to realize high-quality crystals.作者: intrude 時(shí)間: 2025-3-22 15:41 作者: BILE 時(shí)間: 2025-3-22 17:43
Springer Handbook of Crystal Growth978-3-540-74761-1Series ISSN 2522-8692 Series E-ISSN 2522-8706 作者: 費(fèi)解 時(shí)間: 2025-3-22 23:46 作者: CARE 時(shí)間: 2025-3-23 03:00 作者: 跳脫衣舞的人 時(shí)間: 2025-3-23 06:00
Crystal Growth of Oxides by Optical Floating Zone Techniqueshment of the . steady state much faster, leading to better, more stable growth. Growth conditions for different oxides are compared. Important problems in crystal characterization and assessment of micro- and macrodefects are briefly presented.作者: Aerate 時(shí)間: 2025-3-23 13:01
Crystal Growth Techniques and Characterization: An Overview subsequent chapters on fundamentals of growth phenomena, details of growth processes, types of defects, mechanisms of defect formation and distribution, and modeling and characterization tools that are being employed to study as-grown crystals and bring about process improvements for better-quality作者: 云狀 時(shí)間: 2025-3-23 15:53 作者: chassis 時(shí)間: 2025-3-23 19:26 作者: antedate 時(shí)間: 2025-3-24 00:26
Generation and Propagation of Defects During Crystal Growtholutions, in supercooled melt (mainly low-melting organics) and in the vapor phase. To a?smaller extent growth on rounded faces from the melt is also considered when this seems appropriate to bring out analogies or discuss results in a?more general context. The origins and typical configurations of 作者: temperate 時(shí)間: 2025-3-24 03:28
Single Crystals Grown Under Unconstrained Conditions figures), internal morphology (growth sectors, growth banding and associated impurity partitioning) and perfection (dislocations and other lattice defects) in single crystals, we can deduce how and by what mechanism the crystal grew and experienced fluctuation in growth parameters through its growt作者: 寄生蟲(chóng) 時(shí)間: 2025-3-24 08:46
Defect Formation During Crystal Growth from the Meltnetic principles are considered as driving forces of defect generation and incorporation, respectively. Results of modeling and practical in?situ control are presented. Strong emphasis is given to semiconductor crystal growth since it is from this class of materials that most has been first learned,作者: 冒煙 時(shí)間: 2025-3-24 13:17 作者: Glucocorticoids 時(shí)間: 2025-3-24 16:15
Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applicationsapplied Czochralski growth systems and unidirectional solidification systems are the focus for large-scale integrated (LSI) circuits and solar applications, for which control of melt flow is a key issue to realize high-quality crystals.作者: 鐵塔等 時(shí)間: 2025-3-24 19:21 作者: Bucket 時(shí)間: 2025-3-25 03:14 作者: GOAT 時(shí)間: 2025-3-25 03:54 作者: 蝕刻術(shù) 時(shí)間: 2025-3-25 09:09 作者: gorgeous 時(shí)間: 2025-3-25 13:02
Laser-Heated Pedestal Growth of Oxide Fiberss, a?crucible-free process, and growth of high and low melting point materials. These special features make the LHPG technique a?powerful material research tool. We describe the background history, theoretical fundamentals, and how the features of LHPG affect the growth of oxide fibers. We also pres作者: 白楊 時(shí)間: 2025-3-25 18:45 作者: 子女 時(shí)間: 2025-3-25 23:33
Crystal Growth of Laser Host Fluorides and Oxidesals, such as Ti:Al.O., Nd:Y.Al.O., Nd:YVO., Yb:Y.Al.O., Yb:Ca.(PO.).F, and Cr:LiCAF have come to practical application, and are being widely used in scientific research, manufacturing and communication industries, military applications, and other fields of modern engineering. These crystals are main作者: 鞭子 時(shí)間: 2025-3-26 04:05 作者: BRACE 時(shí)間: 2025-3-26 05:25 作者: GEN 時(shí)間: 2025-3-26 08:59
Bulk Crystal Growth of Ternary III–V Semiconductorst and mass transport during the growth of ternary compounds is crucial for achieving high-quality crystals. Melt mixing and melt replenishment methods are discussed. The scale-up issues for commercial viability of ternary substrates is also outlined.作者: 過(guò)渡時(shí)期 時(shí)間: 2025-3-26 13:32
Crystal Growth of Laser Host Fluorides and Oxidesalline oxides and fluorides for laser operation, with emphasis on crystals doped with the additional ions Ti., Nd., and Yb.. On the other hand, special attention is paid to discuss the elimination of growth defects in these crystals. Limited by the length of this chapter, for each crystal, only outstanding defects are considered herein.作者: CAPE 時(shí)間: 2025-3-26 20:43 作者: MOTIF 時(shí)間: 2025-3-27 00:34 作者: 平項(xiàng)山 時(shí)間: 2025-3-27 01:33
and Trapezoidal type inequalities for continuous functions of bounded Selfadjoint operators on complex Hilbert spaces. .The first chapter recalls some fundamental facts concerning bounded Selfadjoint operators on complex Hilbert spaces. The generalized Schwarz’s inequality for positive Selfadjoint 作者: Panacea 時(shí)間: 2025-3-27 07:18
Govindhan Dhanaraj,Kullaiah Byrappa,Vishwanath (Vish) Prasad,Michael Dudley and Trapezoidal type inequalities for continuous functions of bounded Selfadjoint operators on complex Hilbert spaces. .The first chapter recalls some fundamental facts concerning bounded Selfadjoint operators on complex Hilbert spaces. The generalized Schwarz’s inequality for positive Selfadjoint 作者: CORD 時(shí)間: 2025-3-27 11:36
Ivan V. Markov and Trapezoidal type inequalities for continuous functions of bounded Selfadjoint operators on complex Hilbert spaces. .The first chapter recalls some fundamental facts concerning bounded Selfadjoint operators on complex Hilbert spaces. The generalized Schwarz’s inequality for positive Selfadjoint 作者: Enthralling 時(shí)間: 2025-3-27 15:35 作者: Medicare 時(shí)間: 2025-3-27 19:59
Hongjun Li,Jun Xuiagram to correlate almost everything.??This book?continues that tradition and uses the model?to study other non-“dialectical” theories and models.??The major finding?.qua.?contribution in this publication is to point out that the four diagrams are equivalent to the?.BaGua.?or?.BaGuaTu?.(BG).,?.a se作者: 無(wú)力更進(jìn) 時(shí)間: 2025-3-28 01:20
Vitali A. Tatartchenkod uses the model?to study other non-“dialectical” theories and models.??The major finding?.qua.?contribution in this publication is to point out that the four diagrams are equivalent to the?.BaGua.?or?.BaGuaTu?.(BG).,?.a set of?eight?ancient China symbolic notations/gossip.??Another finding is that?作者: GNAT 時(shí)間: 2025-3-28 05:24
iagram to correlate almost everything.??This book?continues that tradition and uses the model?to study other non-“dialectical” theories and models.??The major finding?.qua.?contribution in this publication is to point out that the four diagrams are equivalent to the?.BaGua.?or?.BaGuaTu?.(BG).,?.a se作者: jarring 時(shí)間: 2025-3-28 08:05
Ernesto Diéguez,Jose Luis Plaza,Mohan D. Aggarwal,Ashok K. Batra作者: ERUPT 時(shí)間: 2025-3-28 13:17 作者: separate 時(shí)間: 2025-3-28 15:09 作者: Collision 時(shí)間: 2025-3-28 21:26
eory.??The attempt is to narrow down the gap between the East and the West scholarship/.XueShu., broadly defined, making the book of interest to Eastern and Western philosophers and scholars alike.? ? ??? ??.????????.978-1-4614-2166-5978-1-4614-2167-2Series ISSN 2211-4548 Series E-ISSN 2211-4556 作者: Corral 時(shí)間: 2025-3-29 00:03
2522-8692 tion growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapt978-3-540-74761-1Series ISSN 2522-8692 Series E-ISSN 2522-8706 作者: 說(shuō)笑 時(shí)間: 2025-3-29 06:47 作者: 婚姻生活 時(shí)間: 2025-3-29 08:56
Govindhan Dhanaraj,Kullaiah Byrappa,Vishwanath (Vish) Prasad,Michael Dudleyegral mean and can be used to obtain a priory error bounds for different quadrature rules in approximating the Riemann integral by different Riemann sums. The author also presents recent results extending Ostrowski inequality in various directions for continuous functions of selfadjoint operators in作者: sterilization 時(shí)間: 2025-3-29 12:13 作者: DOLT 時(shí)間: 2025-3-29 17:23 作者: 老人病學(xué) 時(shí)間: 2025-3-29 22:31
Vitali A. Tatartchenkoll-known western-derived theories and models and studies, such as game theory.??The attempt is to narrow down the gap between the East and the West scholarship/.XueShu., broadly defined, making the book of interest to Eastern and Western philosophers and scholars alike.? ? ??? ??.????????.作者: COMMA 時(shí)間: 2025-3-30 01:34
Nucleation at Surfaceszones with reduced supersaturation formed around the growing nuclei is accounted for in determining the saturation nucleus density. The latter scales with the ratio of the surface diffusion coefficient and the atom arrival rate. The scaling exponent is a?function of the critical nucleus size and dep作者: Admire 時(shí)間: 2025-3-30 06:07 作者: 強(qiáng)所 時(shí)間: 2025-3-30 09:42
Single Crystals Grown Under Unconstrained Conditionsate the importance of this type of investigations are selected from both natural minerals (diamond, quartz, hematite, corundum, beryl, phlogopite) and synthetic crystals (SiC, diamond, corundum, beryl).作者: foreign 時(shí)間: 2025-3-30 15:03
Defect Formation During Crystal Growth from the Meltstructural disturbances – dislocations and their patterning – are discussed next. The role of high-temperature dislocation dynamics for collective interactions, such as cell structuring and bunching, is shown. In a?further section second-phase precipitation and inclusion trapping are discussed. The 作者: 沐浴 時(shí)間: 2025-3-30 18:45 作者: 現(xiàn)存 時(shí)間: 2025-3-31 00:25 作者: OVERT 時(shí)間: 2025-3-31 02:36 作者: 乞丐 時(shí)間: 2025-3-31 08:34 作者: 背書(shū) 時(shí)間: 2025-3-31 09:14
Book 2010t, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapt作者: 免費(fèi) 時(shí)間: 2025-3-31 14:24 作者: Anticoagulant 時(shí)間: 2025-3-31 18:59
C. Van Soom,J. Vanderleyden,A. P. Van Goolns. This may be at the cost of strict partitioning of switching and non-switching functions, extensive special handling, special semiconductor process, and a fully custom design effort. Since a single-chip solution is often the smallest, lowest cost and lowest power implementation, the additional ef作者: syncope 時(shí)間: 2025-3-31 22:54
Novel Therapeutic Modalities for Hepatic Diseases,nity to liver cells, and liposome formulation and structure can be modulated to improve targeting ability. The potential of hepatocellular transplantation is to support or replace liver function in acute and chronic hepatic failure, and to assist hepatic function in patients with congenital enzyme d作者: indicate 時(shí)間: 2025-4-1 04:16
The Design Consideration and Optimization for the CEPC Cryogenic Systemrators for operational stability and cost was appreciated. All in all, further TDR design is going on. Every member needs to work together to greatly push forward the work and complete the TDR design on time.作者: reptile 時(shí)間: 2025-4-1 09:07
successfully on the Earth Simulator. The domain covers quasiglobal from 75°S to 75°N excluding arctic regions, with horizontal resolution of 0.1° and 54° vertical levels. Encouraged by high performance of the preceding spin-up integration in capturing the time-mean and transient eddy fields of the 作者: Hiatus 時(shí)間: 2025-4-1 11:03 作者: sultry 時(shí)間: 2025-4-1 14:40
