標題: Titlebook: Simulation of Semiconductor Processes and Devices 2001; SISPAD 01 Dimitris Tsoukalas,Christos Tsamis Conference proceedings 2001 Springer-V [打印本頁] 作者: cessation 時間: 2025-3-21 16:20
書目名稱Simulation of Semiconductor Processes and Devices 2001影響因子(影響力)
書目名稱Simulation of Semiconductor Processes and Devices 2001影響因子(影響力)學科排名
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書目名稱Simulation of Semiconductor Processes and Devices 2001網(wǎng)絡公開度學科排名
書目名稱Simulation of Semiconductor Processes and Devices 2001被引頻次
書目名稱Simulation of Semiconductor Processes and Devices 2001被引頻次學科排名
書目名稱Simulation of Semiconductor Processes and Devices 2001年度引用
書目名稱Simulation of Semiconductor Processes and Devices 2001年度引用學科排名
書目名稱Simulation of Semiconductor Processes and Devices 2001讀者反饋
書目名稱Simulation of Semiconductor Processes and Devices 2001讀者反饋學科排名
作者: arrhythmic 時間: 2025-3-21 21:05
A Unified Model of Dopant Diffusion in SiGe.,The understanding of the effect of each physical mechanism driving dopant and point defect diffusion due to Ge leads to a unified formulation of diffusion for the usual dopants in SiGe material. The model calibration is deduced from a critical synthesis of the theoretical and experimental published studies.作者: transplantation 時間: 2025-3-22 02:00
Dynamics of p+ polysilicon gate depletion due to the formation of boron compounds in TiSi2,In dual workfunction gate technologies it can be observed, that p. poly gates of pMOSFETs tend to lose boron doping. This work presents a model for the transport of Si and B in the TiSi./polysilicon bilayer system that can explain the saturation of the B dose loss.作者: 十字架 時間: 2025-3-22 05:18
Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective PotenAs MOSFET devices are aggressively scaled into the deep submicron regime quantum mechanical effects become increasingly important. We compare the recently proposed effective potential formalism with the density gradient approach for first order quantum simulations of sub 0.1μm MOSFETs within a modified drift diffusion framework.作者: 過濾 時間: 2025-3-22 11:43 作者: 脖子 時間: 2025-3-22 13:30 作者: 連累 時間: 2025-3-22 21:01 作者: 凝結(jié)劑 時間: 2025-3-23 01:00
Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon,ribes the thermal evolution of a supersaturation of Si interstitial atoms in dynamical equilibrium with all types of extrinsic defects. We show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantion energies.作者: BADGE 時間: 2025-3-23 03:40 作者: conceal 時間: 2025-3-23 09:15
A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si1-xGex by Carbiffusion of boron is strongly suppressed by a moderate concentration of substitutional C in Si._.Ge.. This suppression is due to an under saturation of Si selfinterstitials in the C-rich region. The results obtained from the proposed model are in good agreement with the measured values.作者: 過份 時間: 2025-3-23 13:42 作者: Affectation 時間: 2025-3-23 15:09
978-3-7091-7278-0Springer-Verlag Wien 2001作者: cauda-equina 時間: 2025-3-23 21:00
Zhiping Yu,Robert W. Dutton,Danie W. Yergeau,Mario G. Ancona作者: neuron 時間: 2025-3-24 00:14
M. Jaraiz,P. Castrillo,R. Pinacho,I. Martin-Bragado,J. Barbolla作者: JIBE 時間: 2025-3-24 04:29 作者: jarring 時間: 2025-3-24 10:05
F. Cristiano,B. Colombeau,C. Bonafos,J. Aussoleil,G. Ben Assayag,A. Claverie作者: 慷慨援助 時間: 2025-3-24 11:30
Ardechir Pakfar,A. Poncet,T. Schwartzmann,H. Jaouen作者: 簡略 時間: 2025-3-24 17:11 作者: 杠桿 時間: 2025-3-24 20:02
Simulation of Semiconductor Processes and Devices 2001978-3-7091-6244-6作者: 運動的我 時間: 2025-3-25 00:09 作者: LOPE 時間: 2025-3-25 05:29
A. Burenkov,Y. Mu,H. Rysselbes, und die dritte St?rungen der Modellierung und der Knochendichte enth?lt. Beispiele der Gruppen 1–3 sind: die Achondroplasie (1), Multiple kartilagin?re Exostosen (2), Osteogenesis imperfecta (3). Zu den Dysostosen werden Phokomelien, die angeborenen Verbiegungen der langen R?hrenknochen, die Po作者: Deceit 時間: 2025-3-25 09:40
F. G. Lau,W. Molzerbes, und die dritte St?rungen der Modellierung und der Knochendichte enth?lt. Beispiele der Gruppen 1–3 sind: die Achondroplasie (1), Multiple kartilagin?re Exostosen (2), Osteogenesis imperfecta (3). Zu den Dysostosen werden Phokomelien, die angeborenen Verbiegungen der langen R?hrenknochen, die Po作者: 不可思議 時間: 2025-3-25 13:24
and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.978-3-7091-7278-0978-3-7091-6244-6作者: 忍耐 時間: 2025-3-25 17:41 作者: 羅盤 時間: 2025-3-25 20:02
On the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline Targets,ced diffusion during ion implantation, deficiency of the physical model for ion-atomic interaction. The high accuracy of the measurements and the fact that the observed profile broadening is independent of the chemical nature of the target atoms and ions speaks in favour of the last assumption about作者: 前奏曲 時間: 2025-3-26 03:04
Conference proceedings 2001tion chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.作者: Microaneurysm 時間: 2025-3-26 07:54
Macroscopic Quantum Carrier Transport Modeling, to including quantum mechanical (QM) effects in carrier transport. In this paper, we report a five-equation PDE system (reduced to three-equation at thermal equilibrium) which preserves the numerical stability of classical drift-diffusion (DD) model, yet faithfully manifests QM corrections. Tunneli作者: 一回合 時間: 2025-3-26 10:16
Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication, last few years, atomistic Kinetic Monte Carlo has proven to be a new way to tackle the problems that arise as device dimension shrink into the deep submicron regime. We present some encouraging results of exploring the capabilities of this new process modelling approach.作者: 愉快么 時間: 2025-3-26 14:59 作者: Carcinogen 時間: 2025-3-26 20:42
The Role of Incomplete Interstitial-Vacancy Recombination on Silicon Amorphization, show that accumulation of interstitial-vacancy pairs in concentrations of 25% and above lead to homogeneous amorphization. We identify very stable defect structures, consisting of the combination of the pair and Si self-interstitials, which form when there is an excess of interstitials or by incomp作者: Nerve-Block 時間: 2025-3-26 21:48
Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon,ribes the thermal evolution of a supersaturation of Si interstitial atoms in dynamical equilibrium with all types of extrinsic defects. We show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantion作者: Dorsal-Kyphosis 時間: 2025-3-27 03:36
Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach,d than with the “plus-factor” model. The user is not required to run Monte Carlo simulations nor to explicitly take spatial correlations between interstitials and vacancies into account. The model is formulated in terms of effective Frenkel pair numbers and vertical and lateral shift distances betwe作者: Fraudulent 時間: 2025-3-27 07:31
Local Iterative Monte Carlo investigation of the influence of electron-electron scattering on shortTS with channel length as short as 25 nm. The results indicate that electron-electron scat- tering might be an important source for hot electrons in the next generations of Si-MOSFETs. But the effect decreases if the channel length comes close to 25 nm.作者: kindred 時間: 2025-3-27 09:32 作者: 笨重 時間: 2025-3-27 17:22
An Impact Ionization Model Including Non-Maxwellian And Non-Parabolicity Effects,verage carrier energy give a rather poor description of the problem. We show that by accounting for the average square energy an accurate analytical description of the distribution function can be given which can then be used to evaluate microscopic models in a macroscopic device simulator. The new 作者: Neonatal 時間: 2025-3-27 19:48
Density of States and Group Velocity Calculations for SiO2,ee-Fock (HF) and Density-Functional Theory (DFT). Eight energy bands have been used to calculate the density of states and group velocity for the energies of interest. Two different crystal structures of SiO2, built-up by the same fundamental unit, namely, the SiO. tetrahedron, are investigated: the作者: 包庇 時間: 2025-3-27 22:42
Investigation of Spurious Velocity Overshoot Using Monte Carlo Data,d by the drift-diffusion model. Although these models have been available for several decades, there are still unresolved issues. One of these issues is the occurrence of spurious peaks in the velocity profile which have originally been related to Blotekj?r‘s model. Recent research, however, showed 作者: 痛得哭了 時間: 2025-3-28 04:34
Elasto-Plastic Modeling of Microelectronics Materials for Accurate Prediction of the Mechanical Strhe mechanical behavior of (poly)crystalline materials used in the microelectronic technologies. The benefits of this new model are a better prediction of the stresses magnitude in elasto-plastic materials, the capability to calculate the location and size of plastic area in silicon substrate and the作者: Nucleate 時間: 2025-3-28 07:07 作者: 格子架 時間: 2025-3-28 12:30
On the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline Targets,k horse for the simulation of ion implantation for a long time, but recent accurate experimental measurements of the implantation profiles in non-crystalline materials (photoresist, amorphous carbon, pre-amorphized silicon) indicated systematic deviations of the measured profiles from the prediction作者: 疏忽 時間: 2025-3-28 17:39 作者: 我不明白 時間: 2025-3-28 19:47 作者: Ovulation 時間: 2025-3-29 00:48
Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach,stitials and vacancies into account. The model is formulated in terms of effective Frenkel pair numbers and vertical and lateral shift distances between interstitial and vacancy profiles. It is well suited for 1D/2D/3D process simulation.作者: 菊花 時間: 2025-3-29 05:11 作者: refine 時間: 2025-3-29 08:42
Density of States and Group Velocity Calculations for SiO2,gies of interest. Two different crystal structures of SiO2, built-up by the same fundamental unit, namely, the SiO. tetrahedron, are investigated: they are the a-quartz, and the ?-cristobalite..Fig. 3: GV vs. energy for a-quartz and ?-cristobalite. Solid lines: HF; dashed lines: DFT; circles: parabolic-band approximation.作者: 言外之意 時間: 2025-3-29 12:03 作者: Inculcate 時間: 2025-3-29 18:20
Conference proceedings 2001r 5–7, 2001, in Athens.The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models des作者: NAV 時間: 2025-3-29 22:04 作者: Stress 時間: 2025-3-30 00:27 作者: 巡回 時間: 2025-3-30 06:56
,Simplified Inelastic Acoustic—Phonon Hole Scattering Model for Silicon,tics accurately agree with the experimental data at different lattice temperatures, while the population of hot—hole states is significantly enhanced compared to the elastic equipartition approximation. The value of the energy relaxation time to be used in hydrodynamic device simulations is roughly 0.1 ps.作者: CHANT 時間: 2025-3-30 10:43 作者: 留戀 時間: 2025-3-30 16:07 作者: Hyperplasia 時間: 2025-3-30 18:32 作者: 背信 時間: 2025-3-30 23:36
F. G. Lau,W. Molzerisdefekt ist unbekannt. Einige dieser Krankheiten sind bereits bei der Geburt erkennbar. Die meisten manifestieren sich in der Kindheit oder sp?testens in der Adoleszenz, von Ausnahmen abgesehen. Man unterscheidet .. Bei den Osteochondrodysplasien handelt es sich um St?rungen des Wachstums oder der 作者: 不如樂死去 時間: 2025-3-31 03:50
Mira Mayrhofer,Alice Binder,J?rg Matthesng of how adhesion of MM cells in bone marrow (BM) further impacts gene expression in MM cells, as well as in BM stromal cells (BMSCs). As a result of these advances in oncogenomics on the one hand and increased understanding of the role of the BM in the pathogenesis of MM on the other, a new treatm作者: 明確 時間: 2025-3-31 07:26
Kenneth J. Sheaorganizations and political-economic interests, which have intersected with the lives of children and their families. Of this vast pool of information, I sketch the historical elements of each case and those aspects most germane to understanding redress.作者: 心胸狹窄 時間: 2025-3-31 12:43 作者: 綠州 時間: 2025-3-31 13:58
Stephan A. Friedrich von den Eichen,Heinz K. Stahl network. If the data are recorded from one driver only, the neural network displays driving characteristics similar to that driver. A survey should be conducted to determine the set of representative drivers and their driving should be recorded.作者: Cuisine 時間: 2025-3-31 18:18
Stealing Booksook me less than ten minutes to stop by a drugstore and pick up antibiotics. I remember perfectly well locking the car. But the door was opened with the help of a wire hanger, a method the city thieves used at the time, and the jacket—nothing too fancy, by the way—was gone.作者: Explosive 時間: 2025-4-1 01:32 作者: 敲竹杠 時間: 2025-4-1 05:19
al fundamental chemical processes in performing its function; electron, proton and ligand transfers.[1] The coordination chemistry and ligation dynamics of the cytochrome ..-Cu. site, where O2 and other small molecules such as CO, NO and isocyanates can bind, are essential to the function of the enz
