標題: Titlebook: Semiconductor Interfaces at the Sub-Nanometer Scale; H. W. M. Salemink,M. D. Pashley Book 1993 Kluwer Academic Publishers 1993 Helium-Atom [打印本頁] 作者: gloomy 時間: 2025-3-21 19:10
書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale影響因子(影響力)
書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale影響因子(影響力)學科排名
書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale網(wǎng)絡(luò)公開度
書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale網(wǎng)絡(luò)公開度學科排名
書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale被引頻次
書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale被引頻次學科排名
書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale年度引用
書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale年度引用學科排名
書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale讀者反饋
書目名稱Semiconductor Interfaces at the Sub-Nanometer Scale讀者反饋學科排名
作者: Anemia 時間: 2025-3-21 20:56 作者: exercise 時間: 2025-3-22 01:55 作者: Encephalitis 時間: 2025-3-22 07:03
Dipole Layers at GaAs Heterojunctions and their Investigationinterface. We describe the control of the band discontinuities at InAs-GaAs junctions by δ-d oping in the GaAs, close to the interface, and by submonolayer quantities of Be grown right at the interface. The investigation of the barriers by ballistic electron emission microscopy is also described作者: COWER 時間: 2025-3-22 10:58 作者: Leisureliness 時間: 2025-3-22 13:00
Semiconductor Interfaces at the Sub-Nanometer Scale978-94-011-2034-0Series ISSN 0168-132X 作者: 哀求 時間: 2025-3-22 17:47
A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemiccerning the preferred growth directions as a function of growth conditions. Finally I will discuss the question of selected area growth.In making the above comparisons I hope to highlight the key factors needed to assess the relative quality of the interfaces prepared by each technique作者: altruism 時間: 2025-3-22 21:37 作者: Microgram 時間: 2025-3-23 03:09 作者: 獨裁政府 時間: 2025-3-23 07:14 作者: legitimate 時間: 2025-3-23 13:03
Surface Chemistry in the Si/Ge GSMBE system studied using RHEEDlations in both the [001] and [110] azimuths. In this paper I will outline how the RHEED intensity oscillation technique can be used to provide important kinetic data to help in the evaluation of reaction pathways, growth anisotropy and surface segregation effects作者: corn732 時間: 2025-3-23 17:22
A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Latticelysis with diffusion dynamics is also performed on the same model, simulating the growth of a superlattice. Various rates of deposition at the surface is considered. The structure of the interface corresponding to this growth model is then analyzed作者: 吸引人的花招 時間: 2025-3-23 20:53 作者: Truculent 時間: 2025-3-24 00:35 作者: anthesis 時間: 2025-3-24 04:49
0168-132X 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the作者: Duodenitis 時間: 2025-3-24 08:20 作者: arboretum 時間: 2025-3-24 14:25 作者: MULTI 時間: 2025-3-24 15:49 作者: Myofibrils 時間: 2025-3-24 21:25
Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductorsn on (001)GaAs as an illustrative example. The proposed mechanism relies on: (1) a particular reconstruction (‘step-terrace reconstruction (STR)’ model) on vicinal (001) surface with a misorientation towards [111]B direction, (2) a large contraction of P-P distances of P-P dimers, (3) both bond-leng作者: kyphoplasty 時間: 2025-3-25 01:58 作者: 征稅 時間: 2025-3-25 05:20 作者: 細胞 時間: 2025-3-25 09:06
Theory of Atomic-Scale Processes during Epitaxial Growth: Current Statusations are described, along with representative results that have been obtained with these methods. The techniques covered include molecular dynamics and Monte Carlo simulations, and analytic and numerical studies of continuum equations of motion作者: 得罪人 時間: 2025-3-25 13:56 作者: 曲解 時間: 2025-3-25 17:22 作者: 充足 時間: 2025-3-25 20:16
A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Latticed by nearest neighbor and next nearest neighbor two body interactions, with a possible axial anisotropy in the direction of one of the bond directions. The absence of interactions between an odd number of atoms limits the model to the study of systems with a 50% concentration of each type of constit作者: 統(tǒng)治人類 時間: 2025-3-26 03:24
Resonant Tunnelling via the Bound States of Shallow Donors comparing the I(V) of such devices with control samples we are able to identify a peak at low voltage which is due to resonant tunnelling through the localised bound states of the Si donors. To eliminate this peak from the control samples the MBE wafers must be grown at lower temperature (550°C) an作者: notification 時間: 2025-3-26 05:34 作者: CUR 時間: 2025-3-26 10:46 作者: Altitude 時間: 2025-3-26 15:54
Dipole Layers at GaAs Heterojunctions and their Investigationinterface. We describe the control of the band discontinuities at InAs-GaAs junctions by δ-d oping in the GaAs, close to the interface, and by submonolayer quantities of Be grown right at the interface. The investigation of the barriers by ballistic electron emission microscopy is also described作者: 歌唱隊 時間: 2025-3-26 18:12
Clustering and Correlations on GaAs — Metal Interfacegements of the adsorbate atoms were calculated. The results show that most likely the formation of the low-density (ordered or disordered) structures should occur. We show that alkali adatoms mainly act as donors giving their electrons to Ga-derived surface states. These states consist of well local作者: 上坡 時間: 2025-3-26 22:23
Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfrison is made between results obtained on flat, unpinned surfaces and those from rough, pinned surfaces. In both cases, spectroscopic measurements are used to determine the position of the surface Fermi-level relative to the band edges. Band bending in the GaAs induced by the electric-field from the作者: Hangar 時間: 2025-3-27 01:32 作者: 持續(xù) 時間: 2025-3-27 09:14 作者: 蝕刻 時間: 2025-3-27 10:19 作者: 雪崩 時間: 2025-3-27 17:33 作者: 服從 時間: 2025-3-27 20:13
Smear-out of the Ge/Si Interface in Gas Source MBE Monitored by Rheedm epitaxy (GSMBE) using disilane and germane, respectively. Reflection high energy electron diffraction (RHEED) intensity oscillation traces recorded during the growth of silicon on these layers showed a strong increase in growth rate for the first monolayers and a subsequent return to the value for作者: Incorporate 時間: 2025-3-28 01:05
Interface Chemical Structure, Band Offsets and Optical Properties of Various III-V Compounds Heterosattice-matched heterostructures is presented. A strong asymmetry is observed and discussed in parallel with the chemical asymmetry, also related to In segregation, and with a recent tight-binding calculation of the VBO in this system, which shows a clear dependence on the interface chemistry作者: Compatriot 時間: 2025-3-28 04:14 作者: Costume 時間: 2025-3-28 07:15 作者: COMA 時間: 2025-3-28 12:23 作者: justify 時間: 2025-3-28 18:17
Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Dopiproximately 3.5 nm. The extent of this electronic transition is discussed and a quantitative interpretation of the . curves is made, including tip-induced bandbending in the semiconductor. The role of the local doping concentration is discussed in context with spectroscopy. In addition, the observat作者: 描述 時間: 2025-3-28 20:16 作者: 放牧 時間: 2025-3-28 23:19 作者: PATRI 時間: 2025-3-29 05:32 作者: 有雜色 時間: 2025-3-29 10:10
Book 1993cribed below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxo作者: harrow 時間: 2025-3-29 15:15 作者: hurricane 時間: 2025-3-29 19:21
Semiconductor Interfaces at the Sub-Nanometer Scale作者: COW 時間: 2025-3-29 22:10 作者: 積云 時間: 2025-3-30 02:52
P. M. Koenraad,I. Bársony,J. C. M. Henning,J. A. A. P. Perenboom,J. H. Wolterd sometimes comically pretentious strains he supplies for the other bards, Hogg appears much more witty, dynamic and imaginative, with a deftness of touch and a sense of humour which make his ballad ‘The Gude Greye Katt’ one of the jewels of the collection. Even as he depicts himself as an integral 作者: 羊欄 時間: 2025-3-30 07:51 作者: 性別 時間: 2025-3-30 08:20 作者: 草率男 時間: 2025-3-30 15:20 作者: Myocarditis 時間: 2025-3-30 18:30 作者: airborne 時間: 2025-3-30 23:39 作者: Delectable 時間: 2025-3-31 04:46
A. Baldereschi,R. Resta,M. Peressi,S. Baroni,K. M?deran autobiographical novel. He began, Stanislaus reports in his diary, ‘half in anger, to show that in writing about himself he has a subject of more interest than their aimless discussion’. Again, it was Stanislaus who supplied his brother with his working title: . (. 12), after the unlikely name of作者: EXALT 時間: 2025-3-31 06:39
O. Pankratov,M. Schefflerlish tracts relative to her anti-tuberculosis campaign. But of this I am not certain. I took the manuscript home, the issue still undecided, and I am ashamed to think of the length of time I had it in my possession. A month or two at least. It visited with me the house of a friend near Bray, Victor 作者: NAG 時間: 2025-3-31 12:20
R. M. Feenstra,A. Vaterlaus,E. T. Yu,P. D. Kirchner,C. L. Lin,J. M. Woodall,G. D. Pettitim in the way of finding financially possible lodging. I hope he will be all right. The more I know him the better I like him, and though I wish he could remain in Ireland still I would like to see him prosper somewhere. I am sure he will make a name somewhere.’作者: hypnogram 時間: 2025-3-31 16:42 作者: 琺瑯 時間: 2025-3-31 18:31
H. W. M. Salemink,M. B. Johnson,U. Maier,P. Koenraad,O. Albrektsenany book, of literary merit or no, heretofore passed on by the courts and that it must be treated as in a class by itself, and that as such it was obscene.’. Surely Conboy recognized that such an argument lends itself more readily to a defense of the novel than to an attack upon it: if you want to p作者: 松軟無力 時間: 2025-4-1 00:54 作者: BAN 時間: 2025-4-1 05:35
M. Henzlerse toward self-abnegation, but as a way to . in the marriage, breaking apart of the fiction of ., only to reconstruct it in an entirely new ethical form, through empathy and love. Joyce is positing, through Bloom, the radical acceptance of love. Finally, his gesture—his gift—is what permits a new ve作者: fluffy 時間: 2025-4-1 09:44
K. Werner,S. Butzke,P. F. A. Alkemade,S. Radelaar,J. Trommel,P. Balk,W. G. Sloofthe husband, facilitates his wife’s affair. And, crucially, finally, the wife gets the last word. This is a necessary move in the fulfillment of the project of ., as we shall see. No longer cramped in the consciousness of one man jealously pursuing his own jealous desires, we enter into the constant作者: Alveoli 時間: 2025-4-1 13:27 作者: Type-1-Diabetes 時間: 2025-4-1 15:44
Scott M. Moklere through his self-positioning as both a participant in, and a critical viewer of, the literary marketplace; he draws together and critiques some of the competing impulses and rival literary forms circulating in the Romantic period. I begin by situating his kaleidoscopic art at the cultural intersec
