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標(biāo)題: Titlebook: Semiconductor Devices for Power Conditioning; Roland Sittig,P. Roggwiller Book 1982 Plenum Press, New York 1982 high voltage.network.power [打印本頁(yè)]

作者: arouse    時(shí)間: 2025-3-21 16:19
書(shū)目名稱Semiconductor Devices for Power Conditioning影響因子(影響力)




書(shū)目名稱Semiconductor Devices for Power Conditioning影響因子(影響力)學(xué)科排名




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書(shū)目名稱Semiconductor Devices for Power Conditioning被引頻次




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書(shū)目名稱Semiconductor Devices for Power Conditioning讀者反饋




書(shū)目名稱Semiconductor Devices for Power Conditioning讀者反饋學(xué)科排名





作者: Ingratiate    時(shí)間: 2025-3-21 22:02

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W. Gerlach increase of wicked emotions and infatuations. Those who know the principles of ecology and environmental science maintain that definitely non-vegetarianism is very dangerous to human as it pollutes Nature and cause illness. The usefulness of vegetarianism in comparison with non-vegetarianism can be
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F. C. Schwarznd powerful technologies available for application development today.?.Examples in .Jakarta EE Recipes. highlight Jakarta EE’s capabilities, helping you to build streamlined and reliable applications using the latest in Java technologies. The book takes a problem-solution approach in which each sect
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M. S. Adler,V. A. K. Templeen Leiblichkeit wie der seelischen Empfindungen, legitimiert und st?rkt das Projekt der Aufkl?rung eine überwachungsfunktion des Ichs, bzw. im engeren Sinn des überichs. Von diesem Zentrum aus soll der Mensch sich zunehmend in seinen Beziehungen zur Umwelt und den Mitmenschen steuern und sein Triebl
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High-Power Installations Using Semiconductor Devices, Interactions Between Semiconductors and Convetion drives. The speed, direction, and extent of future progress in the development and application of power electronics depend very strongly on the progress made in semiconductor tech-nology, both regarding the signal and the power semiconductors. With new turn-off thyristors, circuits with forced
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作者: ENNUI    時(shí)間: 2025-3-25 02:12
Light-Activated Thyristors,triggering of power thyristors and auxiliary thyristors with lasers or LEDs, i.e. triggering with an internally generated photocurrent, requires the development of highly trigger-sensitive thyristor gates. High trigger-power amplification and different methods of avoiding or compensating for fault t
作者: BLAZE    時(shí)間: 2025-3-25 03:47
Gate Turn-Off Thyristors,elopment, operating principles, device modeling, design considerations, characterization, gate circuits, and a number of applications to actual equipment. The device design is implemented on the basis of modeling and test-sample experiments. The maximum gate turn-off current is shown to vary proport
作者: PACK    時(shí)間: 2025-3-25 07:55

作者: Hay-Fever    時(shí)間: 2025-3-25 12:50
Reverse-Conducting Thyristors,ons of such systems. This advancement is made possible by adapting the device characteristics to the cir-cuit requirements. This is particularly the case with reverse-conducting thyristors. In applications where soft commutation through an antiparallel feedback diode is used, new asymmetric device s
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Analysis and Design of High-Power Rectifiers,hich identify the limit-ing physical mechanisms affecting forward drop in power rectifiers. In the second sec-tion, the effect of packaging variations on surge and steady-state device ratings is investigated. In the third section, the effect that gold, platinum, and electron irradia-tion have on the
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Junction Field-Effect Devices,ectively. The principle of the junction .ield-.ffect .ransistor (JFET) was discovered by Shockley in 1952 and realized as a practical device by Dacey and Ross in 1953. Some years before, in 1950, Nishizawa and Watanabe had applied for a patent for a similar de-vice, which they called the “electrosta
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Epi and Schottky Diodes,voltage, fast diodes to minimize the losses. Reverse recovery times of 30 ns, and reverse voltages of 200 V can be achieved by replacing the double-diffused structure with an epitaxial one. The well-controlled, narrow base width allows low stored charge to be achieved, together with low forward volt
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Junction Field-Effect Devices,undamental idea of the SIT in 1950 was to control a resistance by means of carrier injection into a high resistivity layer using electrostatic induction. Subsequently the term “field effect” was introduced for the same phenomenon and has become widely accepted, leading to some confusion in terminology.
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作者: Curmudgeon    時(shí)間: 2025-3-27 19:37
Reverse-Conducting Thyristors,ysis of important applications, e.g. PWM-inverter and chopper circuits, is used to demonstrate the abi-lity of reverse-conducting thyristors to reduce the costs and the volume of installa-tions, and to open new high-frequency applications. The important fabrication tech-niques of the reverse-conducting thyristor are described.
作者: exceptional    時(shí)間: 2025-3-27 23:08
Light-Activated Thyristors,riggering permit the design of light-activated thyristors which can be triggered with light power in the milliwatt range. The temperature dependence of turn-on properties and some relations to thyristor structures can be obtained from relatively simple charge-control model calculations.
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Book 1982orate Research was established as a separate entity within our Company; the Symposia are held every other year. The themes to date have been 1969 Flow Research on Blading 1971 Real-Time Control of Electric Power Systems 1973 High-Temperature Materials in Gas Turbines 1975 Nonemissive Electrooptic Di
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W. Gerlachithout changing the lifestyle, it is difficult to get rid of those problems. The most important constituent of lifestyle is food or diet. It has been commonly accepted that those who have a lifestyle dominated by non-vegetarian food compared to them the life of vegetarians is healthier. A lifestyle
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Open Discussion,I Wish to comment on the fact that reverse-conducting thyristors are also advantageous in applications using natural commutation. Today they are mostly used in converters with forces commutation.
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Open Discussion,et resistance as low as possible to avoid the saturation phenomena (a) as shown in the figure, and (b), with an n-base which is as wide as possible such that the on-state voltage, V., does not become so high as to cause power dissipation problems.
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Earlier Brown Boveri Symposiahttp://image.papertrans.cn/s/image/864844.jpg




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