標題: Titlebook: Robust SRAM Designs and Analysis; Jawar Singh,Saraju P. Mohanty,Dhiraj K. Pradhan Book 2013 Springer Science+Business Media New York 2013 [打印本頁] 作者: T-cell 時間: 2025-3-21 17:41
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書目名稱Robust SRAM Designs and Analysis網絡公開度學科排名
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書目名稱Robust SRAM Designs and Analysis被引頻次學科排名
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作者: FRET 時間: 2025-3-22 00:01 作者: monologue 時間: 2025-3-22 02:56
Design Metrics of SRAM Bitcell,ent static and dynamic stability metrics are investigated. Static stability metrics includes conventional butterfly curves obtained from the voltage transfer characteristics, the N-curve based metrics and their simulation setup for read and write stability are also discussed. The static stability me作者: 帶傷害 時間: 2025-3-22 07:30
Single-Ended SRAM Bitcell Design, its word-oriented array organization, suitable for low-V. and low-power embedded systems is presented. The SE-SRAM has a strong 2. 65 × worst-case read Static Noise Margin (SNM) compared to a standard 6T bitcell and equivalent to an 8T bitcell from existing literature. The previously proposed singl作者: 不利 時間: 2025-3-22 09:12
2-Port SRAM Bitcell Design,plications realized using System-on-Chip (SoC) technology. Hence, simultaneous or parallel read/write (R/W) access multi-port SRAM bitcells are widely employed in such embedded systems to enhance the memory bandwidth. In this chapter, multi-port SRAM bitcells are studied and their merits and de-meri作者: entice 時間: 2025-3-22 15:34 作者: Foment 時間: 2025-3-22 19:58 作者: 逃避系列單詞 時間: 2025-3-23 00:36 作者: 有斑點 時間: 2025-3-23 04:05
SRAM Bitcell Design Using Unidirectional Devices,d. It is also demonstrated that a functional 6T TFET SRAM design with comparable stability margins and faster performances at low voltages can be realized using unidirectional TFETs devices when compared with the 7T TFET SRAM bitcell.作者: ENACT 時間: 2025-3-23 07:19
NBTI and Its Effect on SRAM,sed cache configurations. It is also found that the low V. transistors age faster than the high V. transistors due to NBTI. Hence, NBTI effect is more pronounced in future technologies due to reduction in V. with technology scaling. Also NBTI effect is more significant at higher temperature.作者: 粗野 時間: 2025-3-23 12:00
Book 2013emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also inclu作者: Abnormal 時間: 2025-3-23 15:30
Introduction to SRAM,nce, device degradation due to ageing and soft errors. In this chapter, introduction and importance of SRAM in memory hierarchy of a modern computer system and its peripheral circuitries have been presented. Different SRAM bitcell topologies and their merits and de-merits are also highlighted.作者: 灌輸 時間: 2025-3-23 19:28
ocess variation, leakage and NBTI for SRAM design and analys.This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge i作者: 橫截,橫斷 時間: 2025-3-23 22:53
Book 2013s; .Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;.Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;.Emphasizes different trade-offs for achieving the best possible SRAM bitcell design..作者: Climate 時間: 2025-3-24 03:16 作者: 入會 時間: 2025-3-24 09:33
2-Port SRAM Bitcell Design,h eliminates the partial write disturbance. Re-configuration of separate read-port of 7T SRAM bitcell reduces the bitline leakage current and makes the bitline sensing more robust and avoids the erroneous read operation caused due to false pull-down of the bitline. The process variation sensitivity 作者: Creatinine-Test 時間: 2025-3-24 12:19
Jawar Singh,Saraju P. Mohanty,Dhiraj K. Pradhantsprechern und entsprechend komplexer Signalverteilung..Dieser Systematik folgt der Aufbau des Kapitels, das zun?chst den Aufbau eines einzelnen Lautsprechers behandelt, um in einem zweiten Abschnitt auf Prinzipien beim Zusammenwirken mehrerer Lautsprecher einzugehen, die man je nach Anwendung als .作者: overbearing 時間: 2025-3-24 16:37 作者: circumvent 時間: 2025-3-24 22:42 作者: 重力 時間: 2025-3-25 02:55 作者: cringe 時間: 2025-3-25 03:49 作者: 踉蹌 時間: 2025-3-25 10:56 作者: 高歌 時間: 2025-3-25 12:22 作者: Cardioplegia 時間: 2025-3-25 19:16 作者: 易改變 時間: 2025-3-25 23:34
http://image.papertrans.cn/r/image/831357.jpg作者: Indelible 時間: 2025-3-26 03:59 作者: Abutment 時間: 2025-3-26 07:53
978-1-4939-0244-6Springer Science+Business Media New York 2013作者: 乏味 時間: 2025-3-26 12:05 作者: Limpid 時間: 2025-3-26 16:03
Online Ad Allocation in?Bounded-Degree Graphss to user queries and issue respective bids. The goal is to assign advertisers to queries so as to maximize the total revenue accrued. The problem can be formulated as a matching problem in a bipartite graph .. We assume that . is a (.,?.)-graph, introduced by Naor and Wajc?[.]. Such graphs model na作者: diathermy 時間: 2025-3-26 16:58 作者: Handedness 時間: 2025-3-26 22:04
The Crystal Structure of the Nitrogenase MoFe Protein from ,. tetramer, M.= 220–230,000, which binds two Mo atoms and 30 Fe atoms in the form of four large metal-sulfur clusters of two types; two clusters of each type are present per tetramer, one of each per αβ dimer.作者: 或者發(fā)神韻 時間: 2025-3-27 01:40 作者: indignant 時間: 2025-3-27 07:20 作者: 欄桿 時間: 2025-3-27 13:10
Vittorio Gallesein communication theory centers on two distinct areas -- modulation and coding. Although each of these areas is discussed, the bulk of the paper is devoted to an exposition of current coding techniques. In these techniques extra, redundant, digits are added to the message before transmission. At the作者: NEX 時間: 2025-3-27 16:31 作者: Mechanics 時間: 2025-3-27 20:32 作者: 毛細血管 時間: 2025-3-27 22:53 作者: Complement 時間: 2025-3-28 05:47 作者: acrophobia 時間: 2025-3-28 08:38
