標(biāo)題: Titlebook: Reduced Thermal Processing for ULSI; Roland A. Levy Book 1989 Plenum Press, New York 1989 Doping.defects.dielectrics.electronics.epitaxy [打印本頁(yè)] 作者: EVOKE 時(shí)間: 2025-3-21 19:07
書(shū)目名稱(chēng)Reduced Thermal Processing for ULSI影響因子(影響力)
書(shū)目名稱(chēng)Reduced Thermal Processing for ULSI影響因子(影響力)學(xué)科排名
書(shū)目名稱(chēng)Reduced Thermal Processing for ULSI網(wǎng)絡(luò)公開(kāi)度
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書(shū)目名稱(chēng)Reduced Thermal Processing for ULSI讀者反饋
書(shū)目名稱(chēng)Reduced Thermal Processing for ULSI讀者反饋學(xué)科排名
作者: 品嘗你的人 時(shí)間: 2025-3-21 23:25 作者: reject 時(shí)間: 2025-3-22 03:36 作者: fastness 時(shí)間: 2025-3-22 06:23 作者: cardiopulmonary 時(shí)間: 2025-3-22 10:16
978-1-4612-7857-3Plenum Press, New York 1989作者: tenuous 時(shí)間: 2025-3-22 13:21
Reduced Thermal Processing for ULSI978-1-4613-0541-5Series ISSN 0258-1221 作者: 美學(xué) 時(shí)間: 2025-3-22 19:14 作者: 控訴 時(shí)間: 2025-3-22 23:34 作者: glans-penis 時(shí)間: 2025-3-23 03:03 作者: GULP 時(shí)間: 2025-3-23 06:08
Rapid Thermal Annealing - Theory and Practice,lved, and because the indirect method of heating the wafer results in large thermal gradients and plastic deformation (slip) if rapid heating is attempted. This disadvantage has become significant in recent years because the reduced thermal processing required by modern smallgeometry processes canno作者: Chandelier 時(shí)間: 2025-3-23 11:50 作者: ERUPT 時(shí)間: 2025-3-23 14:14 作者: Ptsd429 時(shí)間: 2025-3-23 20:50
Low Temperature Silicon Epitaxy for Novel Device Structures,lar and CMOS device performance. Therefore, this paper will present some very attractive new advanced device structures that are possible through the use of low temperature/low pressure (LT/LP) production worthy epitaxial growth techniques that address these ULSI submicron device processing issues.作者: Interdict 時(shí)間: 2025-3-24 01:06 作者: 得罪 時(shí)間: 2025-3-24 04:43
Micrometallization Technologies,ontact resistance, fine-line patternability, resistance to electromigration, strong adherence and good step coverage and conformality. Sometimes all of these requirements cannot be optimized simultaneously and one is forced to adopt a compromise.作者: BILK 時(shí)間: 2025-3-24 09:12 作者: 幾何學(xué)家 時(shí)間: 2025-3-24 14:06
Silicidation by Rapid Thermal Processing,ty and enhanced circuit performance. This was made possible by the use of larger chip areas, but also by a continuous drive towards miniaturization, based upon the classical laws of scaling as introduced by Dennard et al. [1]. In these laws, all device dimensions are reduced by a factor λ, and other作者: ENACT 時(shí)間: 2025-3-24 16:26
Microstructural Defects in Rapid Thermally Processed IC Materials,c requirements. The first of these requirements is that the “active” insulators in MOS devices must be ultra thin, typically below 10 nm thick. Using conventional furnace oxidation it is difficult to produce such thin oxides because the oxidation times are too short to be reproducibly controlled. As作者: 令人心醉 時(shí)間: 2025-3-24 21:17
Rapid Thermal Annealing - Theory and Practice,ing technology for annealing, oxidation, interfacial reaction, solid state diffusion and many other physical changes in the silicon and its overlayers. Despite this central role, heat-treatment has for much of this time been carried out in basically the same way, in contrast to the radical changes t作者: ABIDE 時(shí)間: 2025-3-25 00:57
Rapid Thermal Process Integration,ted and demonstrated thoroughly over the past few years and many excellent reviews of these techniques are now available.. Hundreds of papers have been published dealing with isolated RTP process techniques such as oxidation/nitridation., junction annealing., thermal silicidation., densification and作者: 催眠藥 時(shí)間: 2025-3-25 03:37 作者: corn732 時(shí)間: 2025-3-25 10:47
Micrometallization Technologies,lization materials and processes are needed. Specifically, some of the requirements of the materials for ULSI metallization are low resistivity, low contact resistance, fine-line patternability, resistance to electromigration, strong adherence and good step coverage and conformality. Sometimes all o作者: Gleason-score 時(shí)間: 2025-3-25 11:52
Multilevel Interconnect Structures,l interconnect with regard to density, number of levels, and processing problems; to estimate future needs for multilevel interconnect and consider some possible new ways to achieve these goals. First, to establish some assumptions, Figure 1 shows an interesting relationship with regard to capacitan作者: commune 時(shí)間: 2025-3-25 15:52 作者: 異常 時(shí)間: 2025-3-26 00:02 作者: Cognizance 時(shí)間: 2025-3-26 01:18
Interlevel Dielectrics for Reduced Thermal Processing,ird dimension is now actively used by extending the storage capacitor into the substrate /3/. Figure 2 shows a cross-section through the cell array of the Siemens 4Mbit-DRAM. These tendencies in chip development, which are now a common feature of DRAM-cell concepts /4/, have several technological consequences of conflicting nature:作者: 慟哭 時(shí)間: 2025-3-26 08:09
Introduction to Direct Writing of Integrated Circuit,itable for either development of prototype circuits or filling low-volume custom orders of integrated circuits. It appears to be the most practical near-term application of this technology. Another application of the laser direct writing technique is the discretionary fabrication of high performance devices.作者: Inertia 時(shí)間: 2025-3-26 11:37 作者: HATCH 時(shí)間: 2025-3-26 15:21
Book 1989l budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ul作者: PANT 時(shí)間: 2025-3-26 17:56 作者: ADORN 時(shí)間: 2025-3-27 00:21
The Role of Nasal Cytology in the Diagnosis of Atrophic Rhinitisocess..Nasal cytology covers an important area of research in rhinosinus pathology, since it is a valid method in the differential diagnosis of allergic and non-allergic, bacterial and viral diseases, including atrophic rhinitis..Many factors have contributed to increase the interest about this diag作者: GOAT 時(shí)間: 2025-3-27 04:34 作者: 流動(dòng)才波動(dòng) 時(shí)間: 2025-3-27 05:57 作者: 蚊帳 時(shí)間: 2025-3-27 12:12 作者: 欺騙手段 時(shí)間: 2025-3-27 14:15 作者: Aviary 時(shí)間: 2025-3-27 20:32
A Lightweight RFID Mutual Authentication Protocol with Ownership Transfer,ceability, denial of service(DoS) resistance, man-in-the-middle attack resistance, replay attack resistance and forward security etc. And the new proposed protocol can support secure ownership transfer between the current tag owner and the new one.作者: 游行 時(shí)間: 2025-3-27 22:40 作者: FEAT 時(shí)間: 2025-3-28 05:28
The Legacy of Extraterritoriality and the Trial of Japanese War Criminals in the Republic of China,ing of the continuing effects of extraterritoriality in the Republic of China after 1943. To highlight the special legal historical background of the trials helps explain some of the unique features of the Chinese war crimes program that differed markedly from those held by the other Allies in the Asia Pacific region.作者: EXALT 時(shí)間: 2025-3-28 07:00 作者: 真 時(shí)間: 2025-3-28 11:05 作者: chandel 時(shí)間: 2025-3-28 15:23 作者: fulmination 時(shí)間: 2025-3-28 22:32
2364-6780 ing bringing together different actors, groups and cultures. The book presents the perspectives of scholars and educational experts from various parts of the world, including Brazil, Argentina, Italy, Japan, an978-3-319-37375-1978-3-319-18765-5Series ISSN 2364-6780 Series E-ISSN 2364-6799 作者: 聚集 時(shí)間: 2025-3-29 01:12 作者: grovel 時(shí)間: 2025-3-29 06:19
Tools for Wetland Ecosystem Resource Management in East Africa: Focus on the Lake Victoria Papyrus We in maintaining water quality, fisheries productivity and local meteorology. The management and maintenance of these papyrus wetlands are basic for any hope of controlling or reversing the eutrophication of the lake waters, in particular in the vital inshore area where fisheries are most important.作者: prodrome 時(shí)間: 2025-3-29 10:16
