標(biāo)題: Titlebook: Optical Properties of III–V Semiconductors; The Influence of Mul Heinz Kalt Book 1996 Springer-Verlag Berlin Heidelberg 1996 electronic pro [打印本頁] 作者: infection 時間: 2025-3-21 18:07
書目名稱Optical Properties of III–V Semiconductors影響因子(影響力)
書目名稱Optical Properties of III–V Semiconductors影響因子(影響力)學(xué)科排名
書目名稱Optical Properties of III–V Semiconductors網(wǎng)絡(luò)公開度
書目名稱Optical Properties of III–V Semiconductors網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Optical Properties of III–V Semiconductors被引頻次
書目名稱Optical Properties of III–V Semiconductors被引頻次學(xué)科排名
書目名稱Optical Properties of III–V Semiconductors年度引用
書目名稱Optical Properties of III–V Semiconductors年度引用學(xué)科排名
書目名稱Optical Properties of III–V Semiconductors讀者反饋
書目名稱Optical Properties of III–V Semiconductors讀者反饋學(xué)科排名
作者: 丑惡 時間: 2025-3-21 23:05
0171-1873 ng the various extrema of the band structure or the transfer between them. The monograph .Optical Properties of III-V Semiconductors .is concerned with the III-V bulk and low-dimensional semiconductors with the emphasis on the implications of multi-valley bandstructures on the physical mechanisms es作者: 審問 時間: 2025-3-22 03:50
Book 1996ious extrema of the band structure or the transfer between them. The monograph .Optical Properties of III-V Semiconductors .is concerned with the III-V bulk and low-dimensional semiconductors with the emphasis on the implications of multi-valley bandstructures on the physical mechanisms essential fo作者: 憤憤不平 時間: 2025-3-22 06:06
Book 1996i-edge singularity, electron-hole plasma and liquid formation. The discussion of the latter features is presented self-consistently with the dynamics of excitons and carriers resulting from intervalley coupling.作者: Harass 時間: 2025-3-22 12:11 作者: inspired 時間: 2025-3-22 14:20 作者: Offstage 時間: 2025-3-22 20:28
Excitons in Multi-Valley Semiconductors,ti-valley scenario. Excitonic transitions which are indirect in reciprocal as well as in real space are found in type-II superlattices. The crossover from type-I to type-II band alignment in quasi one- and two-dimensional structures can be deduced from exciton spectroscopy.作者: Gullible 時間: 2025-3-22 22:25 作者: incredulity 時間: 2025-3-23 03:31
978-3-642-63527-4Springer-Verlag Berlin Heidelberg 1996作者: 我就不公正 時間: 2025-3-23 06:17
Optical Properties of III–V Semiconductors978-3-642-58284-4Series ISSN 0171-1873 Series E-ISSN 2197-4179 作者: Hyperplasia 時間: 2025-3-23 12:47
Springer Series in Solid-State Scienceshttp://image.papertrans.cn/o/image/702640.jpg作者: CUMB 時間: 2025-3-23 14:59 作者: notice 時間: 2025-3-23 18:22
Introduction to Semiconductor Band Structures, and forbidden gaps in solids are described, and some basic ideas for the theoretical treatment of the band structure including consideration of the crystal symmetry are discussed. The specific features of the band structure in zincblende-type III–V semiconductors and some general properties of mult作者: Minutes 時間: 2025-3-23 22:56
Excitons in Multi-Valley Semiconductors,s related to excitons in both bulk and low-dimensional semiconductors. We specially emphazise the situation in semiconductors close to the transition from a direct to an indirect-gap band structure. The dynamics of excitons in Al.Ga.As at the crossover point illustrate the consequences of such a mul作者: 慢慢沖刷 時間: 2025-3-24 04:30
Many-Body Effects in Multi-Valley Scenarios,ectrum and the electronic band structure. The reasons are screening — i.e., the collective response of the electron—hole system to interactions resulting from Coulomb and exchange effects — and the removal of oscillator strength by occupation of states in phase space. These many-particle effects are作者: Mhc-Molecule 時間: 2025-3-24 10:08 作者: 隼鷹 時間: 2025-3-24 13:11
Summary and Outlook,s are well suited as model systems for such semiconductors, because the band-gap energies and the constellation of various conduction-band minima can be tuned over a wide range. The character of the fundamental gap can even be changed from direct to indirect, both in reciprocal and in real space. Th作者: Excise 時間: 2025-3-24 15:31 作者: 寬容 時間: 2025-3-24 19:27
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