派博傳思國(guó)際中心

標(biāo)題: Titlebook: New Developments in Semiconductor Physics; Proceedings of the T G. Ferenczi,F. Beleznay Conference proceedings 1988 Springer-Verlag Berlin [打印本頁(yè)]

作者: Exacting 時(shí)間: 2025-3-21 17:33
書(shū)目名稱(chēng)New Developments in Semiconductor Physics影響因子(影響力)

書(shū)目名稱(chēng)New Developments in Semiconductor Physics影響因子(影響力)學(xué)科排名

書(shū)目名稱(chēng)New Developments in Semiconductor Physics網(wǎng)絡(luò)公開(kāi)度

書(shū)目名稱(chēng)New Developments in Semiconductor Physics網(wǎng)絡(luò)公開(kāi)度學(xué)科排名

書(shū)目名稱(chēng)New Developments in Semiconductor Physics被引頻次

書(shū)目名稱(chēng)New Developments in Semiconductor Physics被引頻次學(xué)科排名

書(shū)目名稱(chēng)New Developments in Semiconductor Physics年度引用

書(shū)目名稱(chēng)New Developments in Semiconductor Physics年度引用學(xué)科排名

書(shū)目名稱(chēng)New Developments in Semiconductor Physics讀者反饋

書(shū)目名稱(chēng)New Developments in Semiconductor Physics讀者反饋學(xué)科排名

作者: 創(chuàng)新 時(shí)間: 2025-3-21 21:51

作者: 刀鋒 時(shí)間: 2025-3-22 01:23
The use of hydrostatic pressure and alloying to introduce deep levels in the forbidden gap of InSb taking their predominant character from higher conduction band minima. These states can be made to emerge into the forbidden gap by applying hydrostatic pressure. Judged by the measured pressure coefficients two sets of levels are closely tied to the L- and X-conduction band minima. At low temperat

作者: 披肩 時(shí)間: 2025-3-22 07:43

作者: 傲慢物 時(shí)間: 2025-3-22 12:02
Determination of the lateral defect distribution by SDLTS in GaAs,s approximation cannot be used without restrictions and investigation of the SDLTS signal as a function of generation parameters is necessary, as will be illustrated by measuring the EL2 distribution in GaAs Schottky barrier.

作者: 新陳代謝 時(shí)間: 2025-3-22 13:30

作者: facilitate 時(shí)間: 2025-3-22 19:42

作者: 樣式 時(shí)間: 2025-3-23 00:20
Spectroscopic studies of point defects in silicon and germanium,ts from group III and V in the Periodic Table, special attention is given to defects with binding energies of the ground state much larger than those predicted by the effective mass theory (EMT) such as double donors (group VI) and double acceptors (group II) as well as transition metals. All these

作者: malign 時(shí)間: 2025-3-23 03:54
Interpretation of the electric field dependent thermal emission data of deep traps, the interpretation of the thermal emission probability measurements. It is concluded that the contribution of the capture process if properly taken into account proves the validity of the Poole-Frenkel model of the electric field dependence.

作者: Narrative 時(shí)間: 2025-3-23 06:30

作者: Obstreperous 時(shí)間: 2025-3-23 11:54

作者: Lucubrate 時(shí)間: 2025-3-23 15:44

作者: avarice 時(shí)間: 2025-3-23 18:39
Lawrence C. Snyder,James W. Corbett,Peter Deák,Rongzhi Wu

作者: 可以任性 時(shí)間: 2025-3-23 22:24
H. G. Grimmeiss,M. Kleverman,K. Bergman,L. Montelius

作者: 殘忍 時(shí)間: 2025-3-24 05:30

作者: synovial-joint 時(shí)間: 2025-3-24 08:57
Band-edge offsets in semiconductor heterojunctions,ion-metal-energy level alignment and experimental results of BEO‘s in binary and ternary III–V compounds a level order of valence-band edges in these compounds is proposed. The importance of a fixed reference level formed by transitions metals in the semiconductor is emphasized and recently reported

作者: GREEN 時(shí)間: 2025-3-24 11:01
Theory of the energy loss rate of hot electrons in 2D systems,

作者: 因無(wú)茶而冷淡 時(shí)間: 2025-3-24 15:35
Formation of ribbon-like defects during low-temperature annealing of Czochralski-grown silicon,

作者: forestry 時(shí)間: 2025-3-24 21:42

作者: Juvenile 時(shí)間: 2025-3-25 03:01
The diffusion and electronic structure of hydrogen in silicon,

作者: refine 時(shí)間: 2025-3-25 03:42

作者: adroit 時(shí)間: 2025-3-25 09:13

作者: Definitive 時(shí)間: 2025-3-25 11:56

作者: 誹謗 時(shí)間: 2025-3-25 19:43

作者: 補(bǔ)充 時(shí)間: 2025-3-25 21:10
0075-8450 ltilayer growth technology, theory of electron states, transport theory, defect related effects and structural properties of semiconductors. The book addresses physicists as well as engineers.978-3-662-13669-0978-3-540-39145-6Series ISSN 0075-8450 Series E-ISSN 1616-6361

作者: 鉤針織物 時(shí)間: 2025-3-26 01:37

作者: 有毒 時(shí)間: 2025-3-26 07:08
978-3-662-13669-0Springer-Verlag Berlin Heidelberg 1988

作者: 調(diào)情 時(shí)間: 2025-3-26 08:46

作者: Fermentation 時(shí)間: 2025-3-26 14:07

作者: 道學(xué)氣 時(shí)間: 2025-3-26 17:01
Conference proceedings 1988This volume contains selected papers presented at the summer school on semiconductor physics in Szeged (Hungary). They cover the areas of multilayer growth technology, theory of electron states, transport theory, defect related effects and structural properties of semiconductors. The book addresses physicists as well as engineers.

作者: esculent 時(shí)間: 2025-3-26 20:57